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Lai, Yun-Feng, Chen, Fan, Zeng, Ze-Cun, Lin, PeiJie, Cheng, Shu-Ying, Yu, Jin-Ling (2017) Thermal stability and data retention of resistive random access memory with HfO x /ZnO double layers. Chinese Physics B, 26. 87305pp. doi:10.1088/1674-1056/26/8/087305

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Reference TypeJournal (article/letter/editorial)
TitleThermal stability and data retention of resistive random access memory with HfO x /ZnO double layers
JournalChinese Physics B
AuthorsLai, Yun-FengAuthor
Chen, FanAuthor
Zeng, Ze-CunAuthor
Lin, PeiJieAuthor
Cheng, Shu-YingAuthor
Yu, Jin-LingAuthor
Year2017 (August)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/8/087305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6008569Long-form Identifiermindat:1:5:6008569:2
GUID0
Full ReferenceLai, Yun-Feng, Chen, Fan, Zeng, Ze-Cun, Lin, PeiJie, Cheng, Shu-Ying, Yu, Jin-Ling (2017) Thermal stability and data retention of resistive random access memory with HfO x /ZnO double layers. Chinese Physics B, 26. 87305pp. doi:10.1088/1674-1056/26/8/087305
Plain TextLai, Yun-Feng, Chen, Fan, Zeng, Ze-Cun, Lin, PeiJie, Cheng, Shu-Ying, Yu, Jin-Ling (2017) Thermal stability and data retention of resistive random access memory with HfO x /ZnO double layers. Chinese Physics B, 26. 87305pp. doi:10.1088/1674-1056/26/8/087305
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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