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Sun, Shu-Xiang, Wei, Zhi-Chao, Xia, Peng-Hui, Wang, Wen-Bin, Duan, Zhi-Yong, Li, Yu-Xiao, Zhong, Ying-Hui, Ding, Peng, Jin, Zhi (2018) Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs. Chinese Physics B, 27. 28502pp. doi:10.1088/1674-1056/27/2/028502

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Reference TypeJournal (article/letter/editorial)
TitleEffects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
JournalChinese Physics B
AuthorsSun, Shu-XiangAuthor
Wei, Zhi-ChaoAuthor
Xia, Peng-HuiAuthor
Wang, Wen-BinAuthor
Duan, Zhi-YongAuthor
Li, Yu-XiaoAuthor
Zhong, Ying-HuiAuthor
Ding, PengAuthor
Jin, ZhiAuthor
Year2018 (February)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/2/028502Search in ResearchGate
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Mindat Ref. ID6009117Long-form Identifiermindat:1:5:6009117:0
GUID0
Full ReferenceSun, Shu-Xiang, Wei, Zhi-Chao, Xia, Peng-Hui, Wang, Wen-Bin, Duan, Zhi-Yong, Li, Yu-Xiao, Zhong, Ying-Hui, Ding, Peng, Jin, Zhi (2018) Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs. Chinese Physics B, 27. 28502pp. doi:10.1088/1674-1056/27/2/028502
Plain TextSun, Shu-Xiang, Wei, Zhi-Chao, Xia, Peng-Hui, Wang, Wen-Bin, Duan, Zhi-Yong, Li, Yu-Xiao, Zhong, Ying-Hui, Ding, Peng, Jin, Zhi (2018) Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs. Chinese Physics B, 27. 28502pp. doi:10.1088/1674-1056/27/2/028502
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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