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Sun, Shu-Xiang, Chang, Ming-Ming, Li, Meng-Ke, Ma, Liu-Hong, Zhong, Ying-Hui, Li, Yu-Xiao, Ding, Peng, Jin, Zhi, Wei, Zhi-Chao (2019) Effect of defects properties on InP-based high electron mobility transistors. Chinese Physics B, 28. 78501pp. doi:10.1088/1674-1056/28/7/078501

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Reference TypeJournal (article/letter/editorial)
TitleEffect of defects properties on InP-based high electron mobility transistors
JournalChinese Physics B
AuthorsSun, Shu-XiangAuthor
Chang, Ming-MingAuthor
Li, Meng-KeAuthor
Ma, Liu-HongAuthor
Zhong, Ying-HuiAuthor
Li, Yu-XiaoAuthor
Ding, PengAuthor
Jin, ZhiAuthor
Wei, Zhi-ChaoAuthor
Year2019 (July)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/7/078501Search in ResearchGate
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Mindat Ref. ID6010419Long-form Identifiermindat:1:5:6010419:1
GUID0
Full ReferenceSun, Shu-Xiang, Chang, Ming-Ming, Li, Meng-Ke, Ma, Liu-Hong, Zhong, Ying-Hui, Li, Yu-Xiao, Ding, Peng, Jin, Zhi, Wei, Zhi-Chao (2019) Effect of defects properties on InP-based high electron mobility transistors. Chinese Physics B, 28. 78501pp. doi:10.1088/1674-1056/28/7/078501
Plain TextSun, Shu-Xiang, Chang, Ming-Ming, Li, Meng-Ke, Ma, Liu-Hong, Zhong, Ying-Hui, Li, Yu-Xiao, Ding, Peng, Jin, Zhi, Wei, Zhi-Chao (2019) Effect of defects properties on InP-based high electron mobility transistors. Chinese Physics B, 28. 78501pp. doi:10.1088/1674-1056/28/7/078501
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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