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Li, Jin-Lun, Cui, Shao-Hui, Xu, Jian-Xing, Cui, Xiao-Ran, Guo, Chun-Yan, Ma, Ben, Ni, Hai-Qiao, Niu, Zhi-Chuan (2018) Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector. Chinese Physics B, 27. 47101pp. doi:10.1088/1674-1056/27/4/047101

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Reference TypeJournal (article/letter/editorial)
TitleTwo-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector
JournalChinese Physics B
AuthorsLi, Jin-LunAuthor
Cui, Shao-HuiAuthor
Xu, Jian-XingAuthor
Cui, Xiao-RanAuthor
Guo, Chun-YanAuthor
Ma, BenAuthor
Ni, Hai-QiaoAuthor
Niu, Zhi-ChuanAuthor
Year2018 (April)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/4/047101Search in ResearchGate
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Mindat Ref. ID6009242Long-form Identifiermindat:1:5:6009242:5
GUID0
Full ReferenceLi, Jin-Lun, Cui, Shao-Hui, Xu, Jian-Xing, Cui, Xiao-Ran, Guo, Chun-Yan, Ma, Ben, Ni, Hai-Qiao, Niu, Zhi-Chuan (2018) Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector. Chinese Physics B, 27. 47101pp. doi:10.1088/1674-1056/27/4/047101
Plain TextLi, Jin-Lun, Cui, Shao-Hui, Xu, Jian-Xing, Cui, Xiao-Ran, Guo, Chun-Yan, Ma, Ben, Ni, Hai-Qiao, Niu, Zhi-Chuan (2018) Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector. Chinese Physics B, 27. 47101pp. doi:10.1088/1674-1056/27/4/047101
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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