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Zhang, Yi-Jie, Yin, Zhi-Peng, Su, Yan, Wang, De-Jun (2018) Passivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study. Chinese Physics B, 27. 47103pp. doi:10.1088/1674-1056/27/4/047103

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Reference TypeJournal (article/letter/editorial)
TitlePassivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study
JournalChinese Physics B
AuthorsZhang, Yi-JieAuthor
Yin, Zhi-PengAuthor
Su, YanAuthor
Wang, De-JunAuthor
Year2018 (April)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/4/047103Search in ResearchGate
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Mindat Ref. ID6009244Long-form Identifiermindat:1:5:6009244:3
GUID0
Full ReferenceZhang, Yi-Jie, Yin, Zhi-Peng, Su, Yan, Wang, De-Jun (2018) Passivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study. Chinese Physics B, 27. 47103pp. doi:10.1088/1674-1056/27/4/047103
Plain TextZhang, Yi-Jie, Yin, Zhi-Peng, Su, Yan, Wang, De-Jun (2018) Passivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study. Chinese Physics B, 27. 47103pp. doi:10.1088/1674-1056/27/4/047103
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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