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Bi, Jin-Shun, Xi, Kai, Li, Bo, Wang, Hai-Bin, Ji, Lan-Long, Li, Jin, Liu, Ming (2018) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. Chinese Physics B, 27. 98501pp. doi:10.1088/1674-1056/27/9/098501

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Reference TypeJournal (article/letter/editorial)
TitleHeavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
JournalChinese Physics B
AuthorsBi, Jin-ShunAuthor
Xi, KaiAuthor
Li, BoAuthor
Wang, Hai-BinAuthor
Ji, Lan-LongAuthor
Li, JinAuthor
Liu, MingAuthor
Year2018 (September)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/9/098501Search in ResearchGate
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Mindat Ref. ID6009728Long-form Identifiermindat:1:5:6009728:0
GUID0
Full ReferenceBi, Jin-Shun, Xi, Kai, Li, Bo, Wang, Hai-Bin, Ji, Lan-Long, Li, Jin, Liu, Ming (2018) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. Chinese Physics B, 27. 98501pp. doi:10.1088/1674-1056/27/9/098501
Plain TextBi, Jin-Shun, Xi, Kai, Li, Bo, Wang, Hai-Bin, Ji, Lan-Long, Li, Jin, Liu, Ming (2018) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory. Chinese Physics B, 27. 98501pp. doi:10.1088/1674-1056/27/9/098501
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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