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Zhang, Xiao-Di, Han, Wei-Hua, Liu, Wen, Zhao, Xiao-Song, Guo, Yang-Yan, Yang, Chong, Chen, Jun-Dong, Yang, Fu-Hua (2019) Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor. Chinese Physics B, 28. 127302pp. doi:10.1088/1674-1056/ab527a

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Reference TypeJournal (article/letter/editorial)
TitleSingle-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor
JournalChinese Physics B
AuthorsZhang, Xiao-DiAuthor
Han, Wei-HuaAuthor
Liu, WenAuthor
Zhao, Xiao-SongAuthor
Guo, Yang-YanAuthor
Yang, ChongAuthor
Chen, Jun-DongAuthor
Yang, Fu-HuaAuthor
Year2019 (November)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/ab527aSearch in ResearchGate
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Mindat Ref. ID6010004Long-form Identifiermindat:1:5:6010004:3
GUID0
Full ReferenceZhang, Xiao-Di, Han, Wei-Hua, Liu, Wen, Zhao, Xiao-Song, Guo, Yang-Yan, Yang, Chong, Chen, Jun-Dong, Yang, Fu-Hua (2019) Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor. Chinese Physics B, 28. 127302pp. doi:10.1088/1674-1056/ab527a
Plain TextZhang, Xiao-Di, Han, Wei-Hua, Liu, Wen, Zhao, Xiao-Song, Guo, Yang-Yan, Yang, Chong, Chen, Jun-Dong, Yang, Fu-Hua (2019) Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor. Chinese Physics B, 28. 127302pp. doi:10.1088/1674-1056/ab527a
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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Ma, Liu-Hong, Han, Wei-Hua, Wang, Hao, Yang, Xiang, Yang, Fu-Hua (2015) Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors. Chinese Physics B, 24. 128101pp. doi:10.1088/1674-1056/24/12/128101
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