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Dou, Ya-Mei, Han, Wei-Hua, Guo, Yang-Yan, Zhao, Xiao-Song, Zhang, Xiao-Di, Wu, Xin-Yu, Yang, Fu-Hua (2019) Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor. Chinese Physics B, 28. 66804pp. doi:10.1088/1674-1056/28/6/066804

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor
JournalChinese Physics B
AuthorsDou, Ya-MeiAuthor
Han, Wei-HuaAuthor
Guo, Yang-YanAuthor
Zhao, Xiao-SongAuthor
Zhang, Xiao-DiAuthor
Wu, Xin-YuAuthor
Yang, Fu-HuaAuthor
Year2019 (June)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/6/066804Search in ResearchGate
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Mindat Ref. ID6010317Long-form Identifiermindat:1:5:6010317:4
GUID0
Full ReferenceDou, Ya-Mei, Han, Wei-Hua, Guo, Yang-Yan, Zhao, Xiao-Song, Zhang, Xiao-Di, Wu, Xin-Yu, Yang, Fu-Hua (2019) Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor. Chinese Physics B, 28. 66804pp. doi:10.1088/1674-1056/28/6/066804
Plain TextDou, Ya-Mei, Han, Wei-Hua, Guo, Yang-Yan, Zhao, Xiao-Song, Zhang, Xiao-Di, Wu, Xin-Yu, Yang, Fu-Hua (2019) Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor. Chinese Physics B, 28. 66804pp. doi:10.1088/1674-1056/28/6/066804
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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