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Madan, A., Allison, J., Thompson, M.J. (1976) Switching behaviour of amorphous threshold devices in the gap configuration. Journal of Non-Crystalline Solids, 21 (1) 1-21 doi:10.1016/0022-3093(76)90086-7

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Reference TypeJournal (article/letter/editorial)
TitleSwitching behaviour of amorphous threshold devices in the gap configuration
JournalJournal of Non-Crystalline Solids
AuthorsMadan, A.Author
Allison, J.Author
Thompson, M.J.Author
Year1976 (June)Volume21
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(76)90086-7Search in ResearchGate
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Mindat Ref. ID610322Long-form Identifiermindat:1:5:610322:8
GUID0
Full ReferenceMadan, A., Allison, J., Thompson, M.J. (1976) Switching behaviour of amorphous threshold devices in the gap configuration. Journal of Non-Crystalline Solids, 21 (1) 1-21 doi:10.1016/0022-3093(76)90086-7
Plain TextMadan, A., Allison, J., Thompson, M.J. (1976) Switching behaviour of amorphous threshold devices in the gap configuration. Journal of Non-Crystalline Solids, 21 (1) 1-21 doi:10.1016/0022-3093(76)90086-7
In(1976, June) Journal of Non-Crystalline Solids Vol. 21 (1) Elsevier BV

See Also

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Steventon, A.G. (1976) The switching mechanisms in amorphous chalcogenide memory devices. Journal of Non-Crystalline Solids, 21 (3) 319-329 doi:10.1016/0022-3093(76)90024-7
Jones, S.R., Thompson, M.J., Allison, J., Ormondroyd, R.F. (1978) Relaxation processes in memory and threshold chalcogenide switches. Journal of Non-Crystalline Solids, 28 (1) 1-21 doi:10.1016/0022-3093(78)90071-6
Irfan, A.Y., Williams, J.L., Male, J.C. (1976) On-state behaviour and degradation effects in thin-film amorphous switching devices. Journal of Non-Crystalline Solids, 21 (3) 331-342 doi:10.1016/0022-3093(76)90025-9
Allison, J., Dawe, V.R., Robson, P.N. (1972) Small signal behaviour of chalcogenide glass threshold switching devices. Journal of Non-Crystalline Solids, 8. 563-568 doi:10.1016/0022-3093(72)90193-7
Ormondroyd, R.F., Allison, J., Thompson, M.J. (1974) Properties of filaments in amorphous chalcogenide semiconducting threshold switches. Journal of Non-Crystalline Solids, 15 (2) 310-328 doi:10.1016/0022-3093(74)90057-x
Kelly, M.J., Bullett, D.W. (1976) Topological and electronic structure in group IV amorphous semiconductors. Journal of Non-Crystalline Solids, 21 (2) 155-170 doi:10.1016/0022-3093(76)90038-7
(1976) Editorial Board. Journal of Non-Crystalline Solids, 21 (1) doi:10.1016/0022-3093(76)90085-5
Esqueda, P., Henisch, H.K. (1976) Threshold switching characteristics. Journal of Non-Crystalline Solids, 22 (1) 97-108 doi:10.1016/0022-3093(76)90011-9
Walsh, P.J., Thompson, M.J., Allison, J. (1981) Quantitative prediction of high field, short pulse behaviour of amorphous semiconductors. Journal of Non-Crystalline Solids, 45 (2) 209-227 doi:10.1016/0022-3093(81)90188-5
Ormondroyd, R.F., Thompson, M.J., Allison, J. (1975) Effect of composition and forming parameters on the conductance of amorphous chalcogenide threshold switches. Journal of Non-Crystalline Solids, 18 (3) 375-393 doi:10.1016/0022-3093(75)90139-8
(1976) News item. Journal of Non-Crystalline Solids, 21 (3) 456 doi:10.1016/0022-3093(76)90035-1
 
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