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Steventon, A.G. (1976) The switching mechanisms in amorphous chalcogenide memory devices. Journal of Non-Crystalline Solids, 21 (3) 319-329 doi:10.1016/0022-3093(76)90024-7

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Reference TypeJournal (article/letter/editorial)
TitleThe switching mechanisms in amorphous chalcogenide memory devices
JournalJournal of Non-Crystalline Solids
AuthorsSteventon, A.G.Author
Year1976 (August)Volume21
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(76)90024-7Search in ResearchGate
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Mindat Ref. ID610437Long-form Identifiermindat:1:5:610437:9
GUID0
Full ReferenceSteventon, A.G. (1976) The switching mechanisms in amorphous chalcogenide memory devices. Journal of Non-Crystalline Solids, 21 (3) 319-329 doi:10.1016/0022-3093(76)90024-7
Plain TextSteventon, A.G. (1976) The switching mechanisms in amorphous chalcogenide memory devices. Journal of Non-Crystalline Solids, 21 (3) 319-329 doi:10.1016/0022-3093(76)90024-7
In(1976, August) Journal of Non-Crystalline Solids Vol. 21 (3) Elsevier BV

See Also

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Madan, A., Allison, J., Thompson, M.J. (1976) Switching behaviour of amorphous threshold devices in the gap configuration. Journal of Non-Crystalline Solids, 21 (1) 1-21 doi:10.1016/0022-3093(76)90086-7
Irfan, A.Y., Williams, J.L., Male, J.C. (1976) On-state behaviour and degradation effects in thin-film amorphous switching devices. Journal of Non-Crystalline Solids, 21 (3) 331-342 doi:10.1016/0022-3093(76)90025-9
Schuöcker, Dieter, Rieder, Gerhard (1978) On the reliability of amorphous chalcogenide switching devices. Journal of Non-Crystalline Solids, 29 (3) 397-407 doi:10.1016/0022-3093(78)90160-6
Saji, M., Kao, K.C. (1976) Direct observation of switching filaments in chalcogenide glasses. Journal of Non-Crystalline Solids, 22 (1) 223-227 doi:10.1016/0022-3093(76)90022-3
Stocker, H.J. (1970) Phenomenology of switching and memory effects in semiconducting chalcogenide glasses. Journal of Non-Crystalline Solids, 2. 371-381 doi:10.1016/0022-3093(70)90152-3
Owen, A.E., Le Comber, P.G., Spear, W.E., Hajto, J. (1983) Memory switching in amorphous silicon devices. Journal of Non-Crystalline Solids, 59. 1273-1280 doi:10.1016/0022-3093(83)90398-8
(1976) Erratum. Journal of Non-Crystalline Solids, 21 (3) 454-455 doi:10.1016/0022-3093(76)90034-x
(1976) News item. Journal of Non-Crystalline Solids, 21 (3) 456 doi:10.1016/0022-3093(76)90035-1
(1976) Author index. Journal of Non-Crystalline Solids, 21 (3) 457-460 doi:10.1016/0022-3093(76)90036-3
(1976) Subject index. Journal of Non-Crystalline Solids, 21 (3) 461-466 doi:10.1016/0022-3093(76)90037-5
Friedman, Lionel (1971) Hall conductivity of amorphous semiconductors in the random phase model. Journal of Non-Crystalline Solids, 6 (4) 329-341 doi:10.1016/0022-3093(71)90024-x
 
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