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Shapiro, Finley R., Adler, David (1984) Transport in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 303-308 doi:10.1016/0022-3093(84)90336-3

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Reference TypeJournal (article/letter/editorial)
TitleTransport in hydrogenated amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsShapiro, Finley R.Author
Adler, DavidAuthor
Year1984 (July)Volume66
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(84)90336-3Search in ResearchGate
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Mindat Ref. ID623230Long-form Identifiermindat:1:5:623230:0
GUID0
Full ReferenceShapiro, Finley R., Adler, David (1984) Transport in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 303-308 doi:10.1016/0022-3093(84)90336-3
Plain TextShapiro, Finley R., Adler, David (1984) Transport in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 303-308 doi:10.1016/0022-3093(84)90336-3
In(1984, July) Journal of Non-Crystalline Solids Vol. 66 (1) Elsevier BV

See Also

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Shapiro, Finley R., Adler, David (1985) Equilibrium transport in amorphous semiconductors. Journal of Non-Crystalline Solids, 74 (2) 189-194 doi:10.1016/0022-3093(85)90065-1
Shapiro, Finley R, Adler, David (1985) Electrical conductivity and thermoelectric power in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 139-142 doi:10.1016/0022-3093(85)90628-3
Christina Gabriel, M., Adler, David (1982) Switching in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 48 (2) 297-305 doi:10.1016/0022-3093(82)90167-3
Adler, D., Eberhart, M.E., Johnson, K.H., Zygmunt, S.A. (1984) Metastable defects in amorphous silicon alloys. Journal of Non-Crystalline Solids, 66 (1) 273-278 doi:10.1016/0022-3093(84)90331-4
Ross, R.C., Johncock, A.G., Chan, A.R. (1984) Physical microstructure in device-quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 81-86 doi:10.1016/0022-3093(84)90302-8
Huang, C.-Y., Guha, S., Hudgens, S.J. (1984) Gap state distribution of hydrogenated amorphous silicon-germanium alloys. Journal of Non-Crystalline Solids, 66 (1) 187-192 doi:10.1016/0022-3093(84)90319-3
Grammatica, S., Jansen, F., Mort, J., Morgan, M. (1984) Hole range in compensated hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 71-75 doi:10.1016/0022-3093(84)90300-4
Khan, Babar A., Bai, Peiguong, Adler, David (1984) Electronic structure of amorphous arsenic telluride. Journal of Non-Crystalline Solids, 66 (1) 321-326 doi:10.1016/0022-3093(84)90339-9
Beyer, W. (1984) Doping effects in amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 1-12 doi:10.1016/0022-3093(84)90290-4
Kampas, F.J., Vanier, P.E. (1984) Mechanims involved in the glow-discharge deposition of doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 25-29 doi:10.1016/0022-3093(84)90293-x
Chen, Inan, Jansen, Frank (1984) The nature of non-substitutional dopant states and the carrier density statistics in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 297-301 doi:10.1016/0022-3093(84)90335-1
 
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