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Ross, R.C., Johncock, A.G., Chan, A.R. (1984) Physical microstructure in device-quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 81-86 doi:10.1016/0022-3093(84)90302-8

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Reference TypeJournal (article/letter/editorial)
TitlePhysical microstructure in device-quality hydrogenated amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsRoss, R.C.Author
Johncock, A.G.Author
Chan, A.R.Author
Year1984 (July)Volume66
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(84)90302-8Search in ResearchGate
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Mindat Ref. ID623089Long-form Identifiermindat:1:5:623089:4
GUID0
Full ReferenceRoss, R.C., Johncock, A.G., Chan, A.R. (1984) Physical microstructure in device-quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 81-86 doi:10.1016/0022-3093(84)90302-8
Plain TextRoss, R.C., Johncock, A.G., Chan, A.R. (1984) Physical microstructure in device-quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 81-86 doi:10.1016/0022-3093(84)90302-8
In(1984, July) Journal of Non-Crystalline Solids Vol. 66 (1) Elsevier BV

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Shapiro, Finley R., Adler, David (1984) Transport in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 303-308 doi:10.1016/0022-3093(84)90336-3
Grammatica, S., Jansen, F., Mort, J., Morgan, M. (1984) Hole range in compensated hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 71-75 doi:10.1016/0022-3093(84)90300-4
Beyer, W. (1984) Doping effects in amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 1-12 doi:10.1016/0022-3093(84)90290-4
Kampas, F.J., Vanier, P.E. (1984) Mechanims involved in the glow-discharge deposition of doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 25-29 doi:10.1016/0022-3093(84)90293-x
Chen, Inan, Jansen, Frank (1984) The nature of non-substitutional dopant states and the carrier density statistics in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 297-301 doi:10.1016/0022-3093(84)90335-1
Huang, C.-Y., Guha, S., Hudgens, S.J. (1984) Gap state distribution of hydrogenated amorphous silicon-germanium alloys. Journal of Non-Crystalline Solids, 66 (1) 187-192 doi:10.1016/0022-3093(84)90319-3
Williamson, D.L., Mahan, A.H., Nelson, B.P., Crandall, R.S. (1989) The observation of microvoids in device quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 226-228 doi:10.1016/0022-3093(89)90120-8
Uda, Tsuyoshi, Motooka, Teruaki (1983) Electronic and optical properties of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 59. 81-84 doi:10.1016/0022-3093(83)90530-6
Kazanskii, A.G., Milichevich, E.P., Vavilov, V.S. (1987) Dynamics of Staebler-Wronski effect in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 787-790 doi:10.1016/0022-3093(87)90188-8
Spear, W.E., Steemers, H.L. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids, 66 (1) 163-174 doi:10.1016/0022-3093(84)90316-8
Stutzmann, M., Stuke, J. (1984) New paramagnetic states in amorphous silicon and germanium. Journal of Non-Crystalline Solids, 66 (1) 145-150 doi:10.1016/0022-3093(84)90313-2
 
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