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Spear, W.E., Steemers, H.L. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids, 66 (1) 163-174 doi:10.1016/0022-3093(84)90316-8

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Reference TypeJournal (article/letter/editorial)
TitleThe investigation of excess carrier lifetimes in amorphous silicon by transient methods
JournalJournal of Non-Crystalline Solids
AuthorsSpear, W.E.Author
Steemers, H.L.Author
Year1984 (July)Volume66
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(84)90316-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID623145Long-form Identifiermindat:1:5:623145:7
GUID0
Full ReferenceSpear, W.E., Steemers, H.L. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids, 66 (1) 163-174 doi:10.1016/0022-3093(84)90316-8
Plain TextSpear, W.E., Steemers, H.L. (1984) The investigation of excess carrier lifetimes in amorphous silicon by transient methods. Journal of Non-Crystalline Solids, 66 (1) 163-174 doi:10.1016/0022-3093(84)90316-8
In(1984, July) Journal of Non-Crystalline Solids Vol. 66 (1) Elsevier BV

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Spear, W.E. (1983) The study of transport and related properties of amorphous silicon by transient experiments. Journal of Non-Crystalline Solids, 59. 1-13 doi:10.1016/0022-3093(83)90514-8
Beyer, W. (1984) Doping effects in amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 1-12 doi:10.1016/0022-3093(84)90290-4
Chen, Inan, Jansen, Frank (1984) The nature of non-substitutional dopant states and the carrier density statistics in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 297-301 doi:10.1016/0022-3093(84)90335-1
Spear, W.E, Le Comber, P.G (1972) Investigation of the localised state distribution in amorphous Si films. Journal of Non-Crystalline Solids, 8. 727-738 doi:10.1016/0022-3093(72)90220-7
Le Comber, P.G., Spear, W.E., Allan, D. (1979) Transport studies in doped amorphous silicon. Journal of Non-Crystalline Solids, 32 (1) 1-15 doi:10.1016/0022-3093(79)90061-9
Owen, A.E., Le Comber, P.G., Spear, W.E., Hajto, J. (1983) Memory switching in amorphous silicon devices. Journal of Non-Crystalline Solids, 59. 1273-1280 doi:10.1016/0022-3093(83)90398-8
Shapiro, Finley R., Adler, David (1984) Transport in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 303-308 doi:10.1016/0022-3093(84)90336-3
Spear, W.E., Allan, D., Le Comber, P., Ghaith, A. (1980) The interpretation of transport results in amorphous silicon. Journal of Non-Crystalline Solids, 35. 357-362 doi:10.1016/0022-3093(80)90620-1
Ross, R.C., Johncock, A.G., Chan, A.R. (1984) Physical microstructure in device-quality hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 66 (1) 81-86 doi:10.1016/0022-3093(84)90302-8
Spear, W.E. (1987) The investigation of transport properties in a-si by fast transient techniques. Journal of Non-Crystalline Solids, 90 (1) 171-178 doi:10.1016/s0022-3093(87)80407-6
Stutzmann, M., Stuke, J. (1984) New paramagnetic states in amorphous silicon and germanium. Journal of Non-Crystalline Solids, 66 (1) 145-150 doi:10.1016/0022-3093(84)90313-2
 
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