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Bhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5

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Reference TypeJournal (article/letter/editorial)
TitlePhotoacoustic spectra of amorphous semiconductors Ge20S80−xBix
JournalJournal of Non-Crystalline Solids
AuthorsBhatia, K.L.Author
Bhatnagar, V.K.Author
Year1988 (August)Volume104
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(88)90175-5Search in ResearchGate
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Mindat Ref. ID628477Long-form Identifiermindat:1:5:628477:4
GUID0
Full ReferenceBhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
Plain TextBhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
In(1988, August) Journal of Non-Crystalline Solids Vol. 104 (1) Elsevier BV

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Bhatnagar, V.K., Bhatia, K.L., Gosain, D.P., Jain, V.K. (1987) Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix. Journal of Non-Crystalline Solids, 92 (2) 302-312 doi:10.1016/s0022-3093(87)80048-0
Sharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5
Bhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1985) Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 69 (2) 189-202 doi:10.1016/0022-3093(85)90020-1
Bhatia, K.L. (1983) Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix. Journal of Non-Crystalline Solids, 54 (1) 173-177 doi:10.1016/0022-3093(83)90091-1
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
Bhatia, K.L., Sharma, A.K. (1986) Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 81 (3) 285-291 doi:10.1016/0022-3093(86)90497-7
Takahashi, Takashi (1984) Comment on “structural changes induced by Bi doping in n-type amorphous (GeSe3.5)100−xBix” by K.L. Bhatia. Journal of Non-Crystalline Solids, 63 (3) 413-414 doi:10.1016/0022-3093(84)90107-8
Bhatia, K.L, Katyal, S.C (1982) Structure and photoelectric behavior of amorphous semiconductors in the system PbSGeSGeS2. Journal of Non-Crystalline Solids, 50 (1) 39-48 doi:10.1016/0022-3093(82)90198-3
Bhatia, K.L., Gosain, D.P., Parthasarathy, G., Gopal, E.S.R. (1986) On the structural features of doped amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 86 (1) 65-71 doi:10.1016/0022-3093(86)90475-8
 
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