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Bhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d

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Reference TypeJournal (article/letter/editorial)
TitleFrequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsBhatnagar, V.KAuthor
Bhatia, K.LAuthor
Year1990 (April)Volume119
Issue2
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(90)90845-dSearch in ResearchGate
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Mindat Ref. ID629710Long-form Identifiermindat:1:5:629710:1
GUID0
Full ReferenceBhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
Plain TextBhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
In(1990, April) Journal of Non-Crystalline Solids Vol. 119 (2) Elsevier BV

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Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Bhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
Sharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
Malik, S.K., Bhatia, K.L., Kishore, N., Phor, J.S. (1992) EPR of Mn-doped Pb-modified amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 142. 55-62 doi:10.1016/s0022-3093(05)80006-7
Bhatnagar, V.K., Bhatia, K.L., Gosain, D.P., Jain, V.K. (1987) Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix. Journal of Non-Crystalline Solids, 92 (2) 302-312 doi:10.1016/s0022-3093(87)80048-0
Viras, Fotini, King, Terence A. (1990) The universality of low frequency Raman scattering from amorphous solids. Journal of Non-Crystalline Solids, 119 (1) 65-74 doi:10.1016/0022-3093(90)90241-d
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1985) Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 69 (2) 189-202 doi:10.1016/0022-3093(85)90020-1
Bhatia, K.L, Katyal, S.C (1982) Structure and photoelectric behavior of amorphous semiconductors in the system PbSî—¸GeSî—¸GeS2. Journal of Non-Crystalline Solids, 50 (1) 39-48 doi:10.1016/0022-3093(82)90198-3
Buckley, R.G. (1980) The electrical and optical properties of amorphous germanium-gallium alloys. Journal of Non-Crystalline Solids, 37 (2) 231-240 doi:10.1016/0022-3093(80)90154-4
Bhatia, K.L., Gosain, D.P., Parthasarathy, G., Gopal, E.S.R. (1986) On the structural features of doped amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 86 (1) 65-71 doi:10.1016/0022-3093(86)90475-8
 
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