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Asano, A, Sakai, H (1989) Improvement in the boron-doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Journal of Non-Crystalline Solids, 114. 268-270 doi:10.1016/0022-3093(89)90133-6

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Reference TypeJournal (article/letter/editorial)
TitleImprovement in the boron-doping efficiency of hydrogenated amorphous silicon carbide films using BF3
JournalJournal of Non-Crystalline Solids
AuthorsAsano, AAuthor
Sakai, HAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90133-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID629144Long-form Identifiermindat:1:5:629144:4
GUID0
Full ReferenceAsano, A, Sakai, H (1989) Improvement in the boron-doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Journal of Non-Crystalline Solids, 114. 268-270 doi:10.1016/0022-3093(89)90133-6
Plain TextAsano, A, Sakai, H (1989) Improvement in the boron-doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Journal of Non-Crystalline Solids, 114. 268-270 doi:10.1016/0022-3093(89)90133-6
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

See Also

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Asano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803
Asano, A, Ichimura, T, Sakai, H (1989) Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatus. Journal of Non-Crystalline Solids, 114. 175-177 doi:10.1016/0022-3093(89)90104-x
Abelson, John (1989) Photoconductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 450-452 doi:10.1016/0022-3093(89)90614-5
Crandall, Richard S (1989) Defect relaxation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 597-599 doi:10.1016/0022-3093(89)90661-3
Jackson, Warren (1989) Kinetics of metastable states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 591-596 doi:10.1016/0022-3093(89)90660-1
Zafar, Sufi, Schiff, E.A (1989) Temperature-dependent defect density measurements in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 618-620 doi:10.1016/0022-3093(89)90668-6
Drevillon, B. (1989) In situ studies of the growth of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 139-144 doi:10.1016/0022-3093(89)90094-x
David Cohen, J. (1989) Capacitance studies of deep defects in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 381-386 doi:10.1016/0022-3093(89)90593-0
Kanicki, J., Jousse, D., Gelatos, A., Crowder, M.S. (1989) Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films. Journal of Non-Crystalline Solids, 114. 612-614 doi:10.1016/0022-3093(89)90666-2
Banerjee, Ratnabali, Ray, Swati (1987) Thermoelectric power in boron-doped hydrogenated amorphous-silicon and silicon-carbide thin films. Journal of Non-Crystalline Solids, 89 (1) 1-8 doi:10.1016/s0022-3093(87)80315-0
Shimizu, Tatsuo, Xu, Xixiang, Sasaki, Hiroyuki, Morimoto, Akiharu, Kumeda, Minoru (1989) Thermal equilibration in hydrogenated amorphous silicon-based films. Journal of Non-Crystalline Solids, 114. 648-650 doi:10.1016/0022-3093(89)90678-9
 
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