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Asano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803

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Reference TypeJournal (article/letter/editorial)
TitleImprovement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3
JournalApplied Physics Letters
AuthorsAsano, A.Author
Sakai, H.Author
Year1989 (March 6)Volume54
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.100803Search in ResearchGate
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Mindat Ref. ID8485886Long-form Identifiermindat:1:5:8485886:3
GUID0
Full ReferenceAsano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803
Plain TextAsano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803
In(1989, March) Applied Physics Letters Vol. 54 (10) AIP Publishing

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Asano, A, Sakai, H (1989) Improvement in the boron-doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Journal of Non-Crystalline Solids, 114. 268-270 doi:10.1016/0022-3093(89)90133-6
Asano, A., Ichimura, T., Sakai, H. (1989) Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasmaā€zone apparatus. Journal of Applied Physics, 65 (6). 2439-2444 doi:10.1063/1.342813
Nevin, W. A., Yamagishi, H., Tawada, Y. (1989) Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment. Applied Physics Letters, 54 (13). 1226-1228 doi:10.1063/1.100723
Asano, A, Ichimura, T, Sakai, H (1989) Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatus. Journal of Non-Crystalline Solids, 114. 175-177 doi:10.1016/0022-3093(89)90104-x
Zhang, Fangqing, Chen, Guanghua, He, Deyan (1989) Hydrogen and boron concentrations in doped hydrogenated amorphous siliconā€carbon films measured by nuclear reaction analysis. Applied Physics Letters, 54 (20). 1995-1996 doi:10.1063/1.101193
Alvarez, F. (1985) Bias dependence of doping efficiency in hydrogenated amorphous silicon. Applied Physics Letters, 47 (9). 960-962 doi:10.1063/1.95943
Aker, B., Fritzsche, H. (1983) Photoinduced metastable surface effects in boronā€doped hydrogenated amorphous silicon films. Journal of Applied Physics, 54 (11). 6628-6633 doi:10.1063/1.331899
Matsumura, H., Sakai, K., Maeda, M., Furukawa, S., Horiuchi, K. (1983) Measurement of boron diffusivity in hydrogenated amorphous silicon by using nuclear reaction10B(n,Ī±)7Li. Journal of Applied Physics, 54 (6). 3106-3110 doi:10.1063/1.332464
Chen, Guanghua, Sun, Guosheng, Zhang, Fangqing (1989) Characteristics of electron spin resonance in hydrogenated amorphous siliconā€carbon/hydrogenated amorphous silicon heterojunctions. Applied Physics Letters, 54 (9). 807-809 doi:10.1063/1.100853
Jang, Jin, Park, Seung Chul, Kim, Sung Chul, Lee, Choochon (1987) Increase of doping efficiency by light soaking in boronā€doped hydrogenated amorphous silicon. Applied Physics Letters, 51 (22). 1804-1806 doi:10.1063/1.98528
Asano, A. (1990) Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films. Applied Physics Letters, 56 (6). 533-535 doi:10.1063/1.102736
 
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