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Alvarez, F. (1985) Bias dependence of doping efficiency in hydrogenated amorphous silicon. Applied Physics Letters, 47 (9). 960-962 doi:10.1063/1.95943

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Reference TypeJournal (article/letter/editorial)
TitleBias dependence of doping efficiency in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsAlvarez, F.Author
Year1985 (November)Volume47
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.95943Search in ResearchGate
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Mindat Ref. ID8476871Long-form Identifiermindat:1:5:8476871:9
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Full ReferenceAlvarez, F. (1985) Bias dependence of doping efficiency in hydrogenated amorphous silicon. Applied Physics Letters, 47 (9). 960-962 doi:10.1063/1.95943
Plain TextAlvarez, F. (1985) Bias dependence of doping efficiency in hydrogenated amorphous silicon. Applied Physics Letters, 47 (9). 960-962 doi:10.1063/1.95943
In(1985, November) Applied Physics Letters Vol. 47 (9) AIP Publishing

See Also

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Ellis, F. B., Delahoy, A. E. (1985) Chemical vapor deposition of boron‐doped hydrogenated amorphous silicon. Applied Physics Letters, 47 (2). 135-137 doi:10.1063/1.96432
Asano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803
Stutzmann, Martin (1985) Role of mechanical stress in the light‐induced degradation of hydrogenated amorphous silicon. Applied Physics Letters, 47 (1). 21-23 doi:10.1063/1.96415
Strait, J., Tauc, J. (1985) Light‐induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption. Applied Physics Letters, 47 (6). 589-591 doi:10.1063/1.96081
Tafto, J., Kampas, F. J. (1985) Evidence of chemical ordering in amorphous hydrogenated silicon carbide. Applied Physics Letters, 46 (10). 949-951 doi:10.1063/1.95777
Crandall, Richard (1980) Field‐dependent quantum efficiency in hydrogenated amorphous silicon. Applied Physics Letters, 36 (7). 607-608 doi:10.1063/1.91564
McMahon, T. J., Madan, A. (1985) Photoconductivity and electronic doping effects in hydrogenated amorphous silicon. Journal of Applied Physics, 57 (12). 5302-5305 doi:10.1063/1.334845
Alvarez, F., Prieto, P., Florez, A., Tirado, L., Castro, L. F. (1989) The influence of an external dc substrate bias on the density of states in hydrogenated amorphous silicon. Journal of Applied Physics, 65 (12). 4869-4873 doi:10.1063/1.343200
Jang, Jin, Park, Seung Chul, Kim, Sung Chul, Lee, Choochon (1987) Increase of doping efficiency by light soaking in boron‐doped hydrogenated amorphous silicon. Applied Physics Letters, 51 (22). 1804-1806 doi:10.1063/1.98528
Chen, Guanghua, Sun, Guosheng, Zhang, Fangqing (1989) Characteristics of electron spin resonance in hydrogenated amorphous silicon‐carbon/hydrogenated amorphous silicon heterojunctions. Applied Physics Letters, 54 (9). 807-809 doi:10.1063/1.100853
Alvarez, F., Sebastiani, M. (1992) Equilibrium density of defects in hydrogenated amorphous silicon carbon alloys. Journal of Applied Physics, 71 (12). 5969-5975 doi:10.1063/1.350448
 
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