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Gheorghiu, A., Sénémaud, C., Asal, R., Davis, E.A. (1993) Density of states of a-Si1−yNiy:H alloys determined by X-ray and optical spectroscopies. Journal of Non-Crystalline Solids, 164. 1097-1100 doi:10.1016/0022-3093(93)91190-e

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Reference TypeJournal (article/letter/editorial)
TitleDensity of states of a-Si1−yNiy:H alloys determined by X-ray and optical spectroscopies
JournalJournal of Non-Crystalline Solids
AuthorsGheorghiu, A.Author
Sénémaud, C.Author
Asal, R.Author
Davis, E.A.Author
Year1993 (December)Volume164
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(93)91190-eSearch in ResearchGate
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Mindat Ref. ID633566Long-form Identifiermindat:1:5:633566:7
GUID0
Full ReferenceGheorghiu, A., Sénémaud, C., Asal, R., Davis, E.A. (1993) Density of states of a-Si1−yNiy:H alloys determined by X-ray and optical spectroscopies. Journal of Non-Crystalline Solids, 164. 1097-1100 doi:10.1016/0022-3093(93)91190-e
Plain TextGheorghiu, A., Sénémaud, C., Asal, R., Davis, E.A. (1993) Density of states of a-Si1−yNiy:H alloys determined by X-ray and optical spectroscopies. Journal of Non-Crystalline Solids, 164. 1097-1100 doi:10.1016/0022-3093(93)91190-e
In(1993) Journal of Non-Crystalline Solids Vol. 164. Elsevier BV

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Gheorghiu, A., Sénémaud, C., Asal, R., Davis, E.A. (1995) Study of the electronic structure of a-Si1-yNiy:H alloys by XPS and XES. Journal of Non-Crystalline Solids, 182 (3) 293-301 doi:10.1016/0022-3093(94)00551-6
Davis, E.A, Bayliss, S.C, Asal, R, Manssor, M (1989) Free-carrier behaviour in a-Si1−yNiy:H. Journal of Non-Crystalline Solids, 114. 465-467 doi:10.1016/0022-3093(89)90618-2
Asal, R., Bayliss, S.C., Davis, E.A. (1991) Semiconductor-to-metal transitions induced by pressure in the amorphous alloy system a-Si1−yNiy:H. Journal of Non-Crystalline Solids, 137. 931-934 doi:10.1016/s0022-3093(05)80273-x
Sénémaud, C., Gheorghiu, A., Amoura, L., Etemadi, R., Shirai, H., Godet, C., Fang, M., Gujrathi, S. (1993) Local order and H-bonding in N-rich amorphous silicon nitride. Journal of Non-Crystalline Solids, 164. 1073-1076 doi:10.1016/0022-3093(93)91184-5
Dammer, U., Adkins, C.J., Asal, R., Davis, E.A. (1993) The effect of hydrogenation on the electronic properties of amorphous silicon-nickel alloys near the metal-insulator transition. Journal of Non-Crystalline Solids, 164. 501-504 doi:10.1016/0022-3093(93)90599-s
Sotiropoulos, J, Fuhs, W, Nickel, N (1993) Structure and optical properties of a-Si1−xNx:H alloys. Journal of Non-Crystalline Solids, 164. 881-884 doi:10.1016/0022-3093(93)91138-s
Evangelisti, F. (1993) Atomic and electronic structure of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 164. 1009-1014 doi:10.1016/0022-3093(93)91169-4
Sénémaud, Christiane (1996) Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopies. Journal of Non-Crystalline Solids, 198. 85-90 doi:10.1016/0022-3093(95)00640-0
Wang, F., Schwarz, R. (1993) Characterization of optoelectronic properties of a-Si1−C :H films. Journal of Non-Crystalline Solids, 164. 1039-1042 doi:10.1016/0022-3093(93)91176-4
Singh, A., Davis, E.A., Cox, S.F.J. (1993) Modelling of hydrogen centres in silicon and its oxides by Muon implantation. Journal of Non-Crystalline Solids, 164. 297-300 doi:10.1016/0022-3093(93)90549-d
Xanthakis, J.P. (1993) Electronic structure and band - gap study of Si1−xCx. Journal of Non-Crystalline Solids, 164. 1019-1022 doi:10.1016/0022-3093(93)91171-x
 
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