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Ganguly, Gautam, Sakata, Isao, Matsuda, Akihisa (1996) Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment. Journal of Non-Crystalline Solids, 198. 300-303 doi:10.1016/0022-3093(95)00691-5

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Reference TypeJournal (article/letter/editorial)
TitleTime of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment
JournalJournal of Non-Crystalline Solids
AuthorsGanguly, GautamAuthor
Sakata, IsaoAuthor
Matsuda, AkihisaAuthor
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(95)00691-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID635384Long-form Identifiermindat:1:5:635384:5
GUID0
Full ReferenceGanguly, Gautam, Sakata, Isao, Matsuda, Akihisa (1996) Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment. Journal of Non-Crystalline Solids, 198. 300-303 doi:10.1016/0022-3093(95)00691-5
Plain TextGanguly, Gautam, Sakata, Isao, Matsuda, Akihisa (1996) Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment. Journal of Non-Crystalline Solids, 198. 300-303 doi:10.1016/0022-3093(95)00691-5
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

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Ganguly, Gautam, Matsuda, Akihisa (1996) A new deposition parameter to control the carrier drift mobility in a-Si:H. Journal of Non-Crystalline Solids, 198. 1003-1006 doi:10.1016/0022-3093(96)00022-1
Ganguly, Gautam, Matsuda, Akihisa (1996) Role of hydrogen dilution in improvement of a-SiGe:H alloys. Journal of Non-Crystalline Solids, 198. 559-562 doi:10.1016/0022-3093(95)00763-6
Ganguly, Gautam, Matsuda, Akihisa (1993) Importance of surface processes in defect formation in a-Si:H. Journal of Non-Crystalline Solids, 164. 31-36 doi:10.1016/0022-3093(93)90485-g
Kondo, Michio, Chida, Yoshihiko, Matsuda, Akihisa (1996) Observation of Meyer-Neldel rule in extended energy regime using novel a-Si:H TFTs. Journal of Non-Crystalline Solids, 198. 178-181 doi:10.1016/0022-3093(95)00676-1
Kamei, Toshihiro, Ganguly, Gautam, Hata, Nobuhiro, Matsuda, Akihisa (1993) Defect determination kinetics during the growth of a-Si:H. Journal of Non-Crystalline Solids, 164. 43-46 doi:10.1016/0022-3093(93)90487-i
Chida, Yoshihiko, Kondo, Michio, Matsuda, Akihisa (1996) Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model. Journal of Non-Crystalline Solids, 198. 1121-1124 doi:10.1016/0022-3093(96)00060-9
Tsuboi, Seiji, Matsuse, Mitsutaka, Kawasaki, Masashi, Matsuda, Akihisa, Koinuma, Hideomi (1996) Structural analysis of amorphous thin films by time of flight mass spectrometry. Journal of Non-Crystalline Solids, 198. 33-35 doi:10.1016/0022-3093(95)00650-8
Wang, F., Schwarz, R. (1996) Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination. Journal of Non-Crystalline Solids, 198. 423-427 doi:10.1016/0022-3093(95)00709-1
Fejfar, A., Juška, G., Kočka, J. (1996) Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells. Journal of Non-Crystalline Solids, 198. 190-193 doi:10.1016/0022-3093(95)00679-6
Hata, Nobuhiro, Osborne, Ian S., Ikeda, Toru, Durny, Rudolf, Matsuda, Akihisa (1996) Light-induced metastability of ‘stable’ a-Si:H deposited from silane-dichlorosilane mixtures — comprehensive characterization. Journal of Non-Crystalline Solids, 198. 415-418 doi:10.1016/0022-3093(95)00705-9
Kočka, J, Stuchlı́ková, H, Fejfar, A, Ganguly, G, Sakata, I, Matsuda, A, Juška, G (1998) Reexamination of high drift mobility a-Si:H. Journal of Non-Crystalline Solids, 227. 229-232 doi:10.1016/s0022-3093(98)00059-3
 
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