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Ganguly, Gautam, Matsuda, Akihisa (1996) A new deposition parameter to control the carrier drift mobility in a-Si:H. Journal of Non-Crystalline Solids, 198. 1003-1006 doi:10.1016/0022-3093(96)00022-1

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Reference TypeJournal (article/letter/editorial)
TitleA new deposition parameter to control the carrier drift mobility in a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsGanguly, GautamAuthor
Matsuda, AkihisaAuthor
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(96)00022-1Search in ResearchGate
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Mindat Ref. ID635503Long-form Identifiermindat:1:5:635503:0
GUID0
Full ReferenceGanguly, Gautam, Matsuda, Akihisa (1996) A new deposition parameter to control the carrier drift mobility in a-Si:H. Journal of Non-Crystalline Solids, 198. 1003-1006 doi:10.1016/0022-3093(96)00022-1
Plain TextGanguly, Gautam, Matsuda, Akihisa (1996) A new deposition parameter to control the carrier drift mobility in a-Si:H. Journal of Non-Crystalline Solids, 198. 1003-1006 doi:10.1016/0022-3093(96)00022-1
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

See Also

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Ganguly, Gautam, Sakata, Isao, Matsuda, Akihisa (1996) Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment. Journal of Non-Crystalline Solids, 198. 300-303 doi:10.1016/0022-3093(95)00691-5
Ganguly, Gautam, Matsuda, Akihisa (1996) Role of hydrogen dilution in improvement of a-SiGe:H alloys. Journal of Non-Crystalline Solids, 198. 559-562 doi:10.1016/0022-3093(95)00763-6
Ganguly, Gautam, Matsuda, Akihisa (1993) Importance of surface processes in defect formation in a-Si:H. Journal of Non-Crystalline Solids, 164. 31-36 doi:10.1016/0022-3093(93)90485-g
Chida, Yoshihiko, Kondo, Michio, Matsuda, Akihisa (1996) Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model. Journal of Non-Crystalline Solids, 198. 1121-1124 doi:10.1016/0022-3093(96)00060-9
Kamei, Toshihiro, Ganguly, Gautam, Hata, Nobuhiro, Matsuda, Akihisa (1993) Defect determination kinetics during the growth of a-Si:H. Journal of Non-Crystalline Solids, 164. 43-46 doi:10.1016/0022-3093(93)90487-i
Osborne, Ian S., Hata, Nobuhiro, Matsuda, Akihisa (1996) Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from ‘new’ deposition techniques. Journal of Non-Crystalline Solids, 198. 991-994 doi:10.1016/0022-3093(96)00017-8
Kamei, Toshihiro, Hata, Nobuhiro, Matsuda, Akihisa (1996) A study of surface reactions during the growth of B-doped a-Si:H using the intermittent deposition technique. Journal of Non-Crystalline Solids, 198. 999-1002 doi:10.1016/0022-3093(96)00021-x
Ikeda, Toru, Osborne, Ian S., Hata, Nobuhiro, Matsuda, Akihisa (1996) Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge. Journal of Non-Crystalline Solids, 198. 987-990 doi:10.1016/0022-3093(96)00016-6
Toyoshima, Yasutake, Matsuda, Akihisa, Arai, Kazuo (1996) Behavior of surface hydrogen on a-Ge:H. Journal of Non-Crystalline Solids, 198. 1042-1045 doi:10.1016/0022-3093(96)00036-1
Kondo, Michio, Chida, Yoshihiko, Matsuda, Akihisa (1996) Observation of Meyer-Neldel rule in extended energy regime using novel a-Si:H TFTs. Journal of Non-Crystalline Solids, 198. 178-181 doi:10.1016/0022-3093(95)00676-1
Heintze, M., Zedlitz, R. (1996) New diagnostic aspects of high rate a-Si:H deposition in a VHF plasma. Journal of Non-Crystalline Solids, 198. 1038-1041 doi:10.1016/0022-3093(96)00035-x
 
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