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Fejfar, A., Poruba, A., Vaněček, M., Kočka, J. (1996) Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM. Journal of Non-Crystalline Solids, 198. 304-308 doi:10.1016/0022-3093(95)00692-3

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Reference TypeJournal (article/letter/editorial)
TitlePrecise measurement of the deep defects and surface states in a-Si:H films by absolute CPM
JournalJournal of Non-Crystalline Solids
AuthorsFejfar, A.Author
Poruba, A.Author
Vaněček, M.Author
Kočka, J.Author
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(95)00692-3Search in ResearchGate
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Mindat Ref. ID635385Long-form Identifiermindat:1:5:635385:2
GUID0
Full ReferenceFejfar, A., Poruba, A., Vaněček, M., Kočka, J. (1996) Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM. Journal of Non-Crystalline Solids, 198. 304-308 doi:10.1016/0022-3093(95)00692-3
Plain TextFejfar, A., Poruba, A., Vaněček, M., Kočka, J. (1996) Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM. Journal of Non-Crystalline Solids, 198. 304-308 doi:10.1016/0022-3093(95)00692-3
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

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Vaněček, M., Kočka, J., Poruba, A., Fejfar, A. (1995) Direct measurement of the deep defect density in thin amorphous silicon films with the ‘‘absolute’’ constant photocurrent method. Journal of Applied Physics, 78 (10). 6203-6210 doi:10.1063/1.360566
Fejfar, A., Juška, G., Kočka, J. (1996) Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells. Journal of Non-Crystalline Solids, 198. 190-193 doi:10.1016/0022-3093(95)00679-6
Vaněček, M., Fric, J., Poruba, A., Mahan, A.H., Crandall, R.S. (1996) Influence of annealing above the deposition temperature on metastability in amorphous silicon. Journal of Non-Crystalline Solids, 198. 478-481 doi:10.1016/0022-3093(95)00742-3
Kočka, J., Vaněček, M., Kožíšek, Z., Štika, O., Beichler, J. (1983) Comparison of the density of gap states in a-Si:H found by different methods. Journal of Non-Crystalline Solids, 59. 293-296 doi:10.1016/0022-3093(83)90579-3
Kočka, J., Pelant, I., Fejfar, A. (1996) Light emitting silicon, recent progress. Journal of Non-Crystalline Solids, 198. 857-862 doi:10.1016/0022-3093(96)00070-1
Juška, G., Arlauskas, K., Kočka, J. (1996) Electric field heated electrons in a-Si:H — new features. Journal of Non-Crystalline Solids, 198. 202-205 doi:10.1016/0022-3093(95)00687-7
Hasegawa, S., Nitta, S., Nonomura, S. (1996) Ultra-low frequency CPM of a-Si:H and relaxation. Journal of Non-Crystalline Solids, 198. 544-547 doi:10.1016/0022-3093(95)00758-x
Beck, N., Meier, J., Fric, J., Remeš, Z., Poruba, A., Flückiger, R., Pohl, J., Shah, A., Vaněček, M. (1996) Enhanced optical absorption in microcrystalline silicon. Journal of Non-Crystalline Solids, 198. 903-906 doi:10.1016/0022-3093(96)00080-4
Tříska, A., Shimizu, I., Kočka, J., Tichý, L., Vaněček, M. (1983) Photoelectrical and optical study of p-type a-Si:H used as a photoreceptor. Journal of Non-Crystalline Solids, 59. 493-496 doi:10.1016/0022-3093(83)90628-2
Kocka, J., Vanecek, M., Schauer, F. (1987) a-Si:H gap states investigated by CPM and SCLC. Journal of Non-Crystalline Solids, 97. 715-722 doi:10.1016/0022-3093(87)90169-4
Švrček, V, Fejfar, A, Fojtı́k, P, Mates, T, Poruba, A, Stuchlı́ková, H, Pelant, I, Kočka, J, Nasuno, Y, Kondo, M, Matsuda, A (2002) Importance of the transport isotropy in μc-Si:H thin films for solar cells deposited at low substrate temperatures. Journal of Non-Crystalline Solids, 299. 395-399 doi:10.1016/s0022-3093(01)01014-6
 
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