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Bensaoula, A, Veuillen, J.Y, Tan, T.A.Nguyen, Derrien, J, De Crescenzi, M (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science, 241 (3). 425-430 doi:10.1016/0039-6028(91)90102-x

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the Co/Si(111) interface formation using electron energy loss spectroscopy
JournalSurface Science
AuthorsBensaoula, AAuthor
Veuillen, J.YAuthor
Tan, T.A.NguyenAuthor
Derrien, JAuthor
De Crescenzi, MAuthor
Year1991 (January)Volume241
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0039-6028(91)90102-xSearch in ResearchGate
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Mindat Ref. ID6462009Long-form Identifiermindat:1:5:6462009:5
GUID0
Full ReferenceBensaoula, A, Veuillen, J.Y, Tan, T.A.Nguyen, Derrien, J, De Crescenzi, M (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science, 241 (3). 425-430 doi:10.1016/0039-6028(91)90102-x
Plain TextBensaoula, A, Veuillen, J.Y, Tan, T.A.Nguyen, Derrien, J, De Crescenzi, M (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science, 241 (3). 425-430 doi:10.1016/0039-6028(91)90102-x
In(1991, January) Surface Science Vol. 241 (3) Elsevier BV

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Bensaoula, A., Veuillen, J.Y., Tan, T.A.Nguyen, Derrien, J., De Crescenzi, M. (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science Letters, 241 (3). doi:10.1016/0167-2584(91)91142-j
Veuillen, J.-Y., Tan, T.A.Nguyen, D'Addato, S., Nannarone, S. (1991) Empty states of the Ni/Si(111)7 × 7 interface. Surface Science, 251. 258-261 doi:10.1016/0039-6028(91)90993-3
Tan, T.A.Nguyen, Azizan, M., Veuillen, J.Y. (1991) Inverse photoemission study of refractory metal/silicon interfaces. Surface Science, 251. 428-431 doi:10.1016/0039-6028(91)91028-v
Chaînet, E., De Crescenzi, M., Derrien, J., Nguyen, T.T.A., Cinti, R.C. (1986) Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure technique. Surface Science, 168 (1). 801-809 doi:10.1016/0039-6028(86)90912-x
Lagomarsino, S., Nikolaenko, A., Scarinci, F., D'angelo, S., Derrien, J., Veuillen, J.Y. (1989) Structural study of the CoSi2/Si(111) buried interface. Surface Science, 211. 692-697 doi:10.1016/0039-6028(89)90830-3
Veuillen, J.Y., Tan, T.A.Nguyen, Lollman, D.B.B., Guerfi, N., Cinti, R. (1991) Electronic properties of epitaxial erbium silicide. Surface Science, 251. 432-436 doi:10.1016/0039-6028(91)91029-w
Kennou, S., Veuillen, J.Y., Tan, T.A.Nguyen (1994) Formation and electronic properties of erbium silicide on Si(100). Surface Science, 307. 258-263 doi:10.1016/0039-6028(94)90404-9
Veuillen, J. Y., Bensaoula, A., De Crescenzi, M., Derrien, J. (1989) Short-range local order of the Co/Si(111) interface studied by the extended Auger fine-structure technique. Physical Review B, 39 (14) 10398-10401 doi:10.1103/physrevb.39.10398
Chaînet, E., De Crescenzi, M., Derrien, J., Nguyen, T.T.A., Cinti, R.C. (1986) Local structure determination of the Co-Si(111) interface by surface electron energy-loss fine-structure technique. Surface Science Letters, 168 (1). doi:10.1016/0167-2584(86)90502-5
De Crescenzi, M., Gaggiotti, G., Motta, N., Patella, F., Balzarotti, A., Mattogno, G., Derrien, J. (1991) Electronic structure of epitaxial β-FeSi2 on Si(111). Surface Science, 251. 175-179 doi:10.1016/0039-6028(91)90976-y
Cherief, N., Cinti, R., De Crescenzi, M., Derrien, J., Nguyen Tan, T.A., Veuillen, J.Y. (1990) Heteroepitaxy of metallic and semiconducting silicides on silicon. Applied Surface Science, 41. 241-252 doi:10.1016/0169-4332(89)90064-0
 
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