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Cherief, N., Cinti, R., De Crescenzi, M., Derrien, J., Nguyen Tan, T.A., Veuillen, J.Y. (1990) Heteroepitaxy of metallic and semiconducting silicides on silicon. Applied Surface Science, 41. 241-252 doi:10.1016/0169-4332(89)90064-0

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxy of metallic and semiconducting silicides on silicon
JournalApplied Surface Science
AuthorsCherief, N.Author
Cinti, R.Author
De Crescenzi, M.Author
Derrien, J.Author
Nguyen Tan, T.A.Author
Veuillen, J.Y.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90064-0Search in ResearchGate
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Mindat Ref. ID9894934Long-form Identifiermindat:1:5:9894934:8
GUID0
Full ReferenceCherief, N., Cinti, R., De Crescenzi, M., Derrien, J., Nguyen Tan, T.A., Veuillen, J.Y. (1990) Heteroepitaxy of metallic and semiconducting silicides on silicon. Applied Surface Science, 41. 241-252 doi:10.1016/0169-4332(89)90064-0
Plain TextCherief, N., Cinti, R., De Crescenzi, M., Derrien, J., Nguyen Tan, T.A., Veuillen, J.Y. (1990) Heteroepitaxy of metallic and semiconducting silicides on silicon. Applied Surface Science, 41. 241-252 doi:10.1016/0169-4332(89)90064-0
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Nguyen Tan, T.A., Guerfi, N., Veuillen, J.Y., Derrien, J. (1990) Oxidation of TaSi2 thin films on polycrystalline Si. Applied Surface Science, 41. 266-271 doi:10.1016/0169-4332(89)90068-8
Guerfi, N., Tan, T.A. Nguyen, Veuillen, J.Y., Lollman, D.B. (1992) Oxidation of thin ErSi1.7 overlayers on Si(111). Applied Surface Science, 56. 501-506 doi:10.1016/0169-4332(92)90278-6
Cherief, N., Dā€™Anterroches, C., Cinti, R. C., Nguyen Tan, T. A., Derrien, J. (1989) Semiconducting silicideā€silicon heterojunction elaboration by solid phase epitaxy. Applied Physics Letters, 55 (16). 1671-1673 doi:10.1063/1.102313
Kennou, S., Ladas, S., Grimaldi, M.G., Nguyen Tan, T.A., Veuillen, J.Y. (1996) Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon. Applied Surface Science, 102. 142-146 doi:10.1016/0169-4332(96)00034-7
Veuillen, J.Y., Nguyen Tan, T.A., Lollman, D.B.B., Guerfi, N., Cinti, R. (1991) Electronic properties of epitaxial erbium silicide. Surface Science Letters, 251. doi:10.1016/0167-2584(91)90901-3
Bensaoula, A., Veuillen, J.Y., Tan, T.A.Nguyen, Derrien, J., De Crescenzi, M. (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science Letters, 241 (3). doi:10.1016/0167-2584(91)91142-j
Kennou, S., Cherief, N., Cinti, R.C., Nguyen Tan, T.A. (1989) The influence of steps on the epitaxial growth of iron-silicide on Si(001). Surface Science Letters, 211. doi:10.1016/0167-2584(89)90377-0
Bensaoula, A, Veuillen, J.Y, Tan, T.A.Nguyen, Derrien, J, De Crescenzi, M (1991) Study of the Co/Si(111) interface formation using electron energy loss spectroscopy. Surface Science, 241 (3). 425-430 doi:10.1016/0039-6028(91)90102-x
Azizan, M., Baptist, R., Tan, T.A.Nguyen, Veuillen, J.Y. (1989) Electronic structure of refractory metal silicide thin films. Applied Surface Science, 38. 117-124 doi:10.1016/0169-4332(89)90526-6
Motta, N., Sgarlata, A., De Crescenzi, M., Derrien, J. (1996) STM studies of Geī—øSi thin layers epitaxially grown on Si(111). Applied Surface Science, 102. 57-61 doi:10.1016/0169-4332(96)00019-0
Ali, I., Muret, P., Nguyen Tan, T.A. (1996) Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111). Applied Surface Science, 102. 147-150 doi:10.1016/0169-4332(96)00035-9
 
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