Reference Type | Journal (article/letter/editorial) |
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Title | Initial growth stage of CaF2 on Si(111)-7 Γ 7 studied by high temperature UHV-STM |
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Journal | Surface Science |
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Authors | Sumiya, Touru | Author |
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Miura, Tadao | Author |
Tanaka, Shun-ichiro | Author |
Year | 1996 (June) | Volume | 357 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/0039-6028(96)00287-7Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6469431 | Long-form Identifier | mindat:1:5:6469431:9 |
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GUID | 0 |
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Full Reference | Sumiya, Touru, Miura, Tadao, Tanaka, Shun-ichiro (1996) Initial growth stage of CaF2 on Si(111)-7 Γ 7 studied by high temperature UHV-STM. Surface Science, 357. 896-899 doi:10.1016/0039-6028(96)00287-7 |
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Plain Text | Sumiya, Touru, Miura, Tadao, Tanaka, Shun-ichiro (1996) Initial growth stage of CaF2 on Si(111)-7 Γ 7 studied by high temperature UHV-STM. Surface Science, 357. 896-899 doi:10.1016/0039-6028(96)00287-7 |
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In | (1996) Surface Science Vol. 357. Elsevier BV |
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