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Sumiya, Touru (2000) Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy. Applied Surface Science, 156. 85-96 doi:10.1016/s0169-4332(99)00364-5

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Reference TypeJournal (article/letter/editorial)
TitleInitial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy
JournalApplied Surface Science
AuthorsSumiya, TouruAuthor
Year2000 (February)Volume156
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00364-5Search in ResearchGate
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Mindat Ref. ID9901741Long-form Identifiermindat:1:5:9901741:5
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Full ReferenceSumiya, Touru (2000) Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy. Applied Surface Science, 156. 85-96 doi:10.1016/s0169-4332(99)00364-5
Plain TextSumiya, Touru (2000) Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy. Applied Surface Science, 156. 85-96 doi:10.1016/s0169-4332(99)00364-5
In(n.d.) Applied Surface Science Vol. 156. Elsevier BV

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Sumiya, Touru, Miura, Tadao, Fujinuma, Haruko, Tanaka, Shun-ichiro (1997) Surface reconstruction in CaF2/Si(001) investigated by scanning tunneling microscopy. Surface Science, 376 (1). 192-204 doi:10.1016/s0039-6028(96)01312-x
Sumiya, Touru, Fujinuma, Haruko, Miura, Tadao, Tanaka, Shun-ichiro (1998) Ballistic electron emission microscopy studies of Au/CaF2/n-Si(111) interfaces. Applied Surface Science, 130. 36-40 doi:10.1016/s0169-4332(98)00021-x
Wollschläger, Joachim, Meier, Andreas (1996) Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111). Applied Surface Science, 104. 392-401 doi:10.1016/s0169-4332(96)00177-8
Sumiya, Touru, Miura, Tadao, Tanaka, Shun-ichiro (1996) Initial growth stage of CaF2 on Si(111)-7 × 7 studied by high temperature UHV-STM. Surface Science, 357. 896-899 doi:10.1016/0039-6028(96)00287-7
Sumiya, Touru, Miura, Tadao, Fujinuma, Haruko, Tanaka, Shun-ichiro (1997) Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy. Applied Surface Science, 117. 329-333 doi:10.1016/s0169-4332(97)80103-1
Sumiya, Touru, Miura, Tadao, Fujinuma, Haruko, Tanaka, Shun-ichiro (1996) Scanning Tunneling Microscopy Study of Initial Growth of $\bf CaF_{2}$ and $\bf BaF_{2}$ on Si(111) Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1077
Sekar, K, Sundaravel, B, Wilson, I.H, Heiland, W (2000) Scanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces. Applied Surface Science, 156. 161-168 doi:10.1016/s0169-4332(99)00504-8
Kimura, Yasuo, Kondo, Yusuke, Niwano, Michio (2001) Initial stages of porous Si formation on Si surfaces investigated by infrared spectroscopy. Applied Surface Science, 175. 157-162 doi:10.1016/s0169-4332(01)00029-0
Tabe, Michiharu, Yamamoto, Takeshi (1997) Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies. Surface Science, 376 (1). 99-112 doi:10.1016/s0039-6028(96)01314-3
Ezoe, K, Kuriyama, H, Yamamoto, T, Ohara, S, Matsumoto, S (1998) Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111). Applied Surface Science, 130. 13-17 doi:10.1016/s0169-4332(98)00017-8
Yao, Takafumi, Shinabe, Shinji, Yoshimura, Masamichi (1996) Atomistic study of the formation process of Ni silicide on the Si(111)-7×7 surface with scanning tunneling microscopy. Applied Surface Science, 104. 213-217 doi:10.1016/s0169-4332(96)00146-8
 
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