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Wollschläger, Joachim, Meier, Andreas (1996) Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111). Applied Surface Science, 104. 392-401 doi:10.1016/s0169-4332(96)00177-8

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Reference TypeJournal (article/letter/editorial)
TitleDiffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111)
JournalApplied Surface Science
AuthorsWollschläger, JoachimAuthor
Meier, AndreasAuthor
Year1996 (September)Volume104
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(96)00177-8Search in ResearchGate
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Mindat Ref. ID9898775Long-form Identifiermindat:1:5:9898775:5
GUID0
Full ReferenceWollschläger, Joachim, Meier, Andreas (1996) Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111). Applied Surface Science, 104. 392-401 doi:10.1016/s0169-4332(96)00177-8
Plain TextWollschläger, Joachim, Meier, Andreas (1996) Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111). Applied Surface Science, 104. 392-401 doi:10.1016/s0169-4332(96)00177-8
In(n.d.) Applied Surface Science Vol. 104. Elsevier BV

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Wollschläger, Joachim, Klust, Andreas, Pietsch, Holger (1998) Inhomogeneous growth of CaF2 adlayers on Si(111) at intermediate temperatures. Applied Surface Science, 123. 496-500 doi:10.1016/s0169-4332(97)00552-7
Sumiya, Touru (2000) Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy. Applied Surface Science, 156. 85-96 doi:10.1016/s0169-4332(99)00364-5
Wollschläger, Joachim, Pietsch, Holger, Klust, Andreas (1998) Competition between terrace and step nucleation: epitaxy of CaF2 on vicinal Si(111) studied by atomic force microscopy. Applied Surface Science, 130. 29-35 doi:10.1016/s0169-4332(98)00020-8
Pietsch, H., Klust, A., Meier, A., Wollschläger, J. (1997) Growth instabilities of CaF2 adlayers deposited at high temperature on Si(111). Surface Science, 377. 909-913 doi:10.1016/s0039-6028(96)01520-8
Kim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1
Wollschläger, Joachim, Meier, Andreas (1996) Film and interface morphology of CaF2 grown on Si(111) at low temperature. Journal of Applied Physics, 79 (9). 7373-7375 doi:10.1063/1.361525
Tappe, T., Chatziparaskewas, A., Schäffer, J., Schlosser, J., Schmalhorst, J., Schmiedeskamp, B. (1996) Medium energy ion scattering (MEIS) studies on Si/GaSb/Si- and Si/CaF2/Si(111) layer systems. Applied Surface Science, 104. 661-668 doi:10.1016/s0169-4332(96)00221-8
Kaminski, A.Yu., Suris, R.A. (1996) Smoothing of crystal surfaces during growth interruption. Applied Surface Science, 104. 312-316 doi:10.1016/s0169-4332(96)00163-8
Mori, M., Li, D.M., Yamazaki, M., Tambo, T., Ueba, H., Tatsuyama, C. (1996) Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers. Applied Surface Science, 104. 563-569 doi:10.1016/s0169-4332(96)00203-6
Olshanetsky, B.Z. (1996) Atomic phenomena on Si surfaces at adsorption of transition metals. Applied Surface Science, 104. 130-136 doi:10.1016/s0169-4332(96)00133-x
Roy, M., Borensztein, Y. (1996) Optical study of potassium growth on the Si(100) surface. Applied Surface Science, 104. 147-151 doi:10.1016/s0169-4332(96)00136-5
 
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