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Kim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces
JournalApplied Surface Science
AuthorsKim, B.M.Author
Ventrice, C.A.Author
Mercer, T.Author
Overney, R.Author
Schowalter, L.J.Author
Year1996 (September)Volume104
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(96)00179-1Search in ResearchGate
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Mindat Ref. ID9898777Long-form Identifiermindat:1:5:9898777:3
GUID0
Full ReferenceKim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1
Plain TextKim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1
In(n.d.) Applied Surface Science Vol. 104. Elsevier BV

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LaBella, V.P., Ventrice, C.A., Schowalter, L.J. (1998) Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures. Applied Surface Science, 123. 213-218 doi:10.1016/s0169-4332(97)00543-6
Shusterman, Y.V, Yakovlev, N.L, Schowalter, L.J (2001) Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1). Applied Surface Science, 175. 27-32 doi:10.1016/s0169-4332(01)00033-2
Ventrice, C.A., LaBella, V.P., Ramaswamy, G., Yu, H.-P., Schowalter, L.J. (1996) Hot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy. Applied Surface Science, 104. 274-281 doi:10.1016/s0169-4332(96)00215-2
Wollschläger, Joachim, Meier, Andreas (1996) Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111). Applied Surface Science, 104. 392-401 doi:10.1016/s0169-4332(96)00177-8
Luo, C.H., Shen, G.H., Chen, L.J. (1997) Vacancy ordering structures in epitaxial RESi2−x thin films on (111)Si and (001)Si. Applied Surface Science, 113. 457-461 doi:10.1016/s0169-4332(96)00806-9
Lee, B.C., Khilko, A.Yu., Shusterman, Yu.V., Yakovlev, N.L., Sokolov, N.S., Kyutt, R.N., Suturin, S.M., Schowalter, L.J. (1998) Structural and electrical characterization of epitaxial CdF2 layers grown on Si(111) and CaF2(111) substrates. Applied Surface Science, 123. 590-594 doi:10.1016/s0169-4332(97)00574-6
Deelman, Peter W., Thundat, Thomas, Schowalter, Leo J. (1996) AFM and RHEED study of Ge islanding on Si(111) and Si(100). Applied Surface Science, 104. 510-515 doi:10.1016/s0169-4332(96)00195-x
Shen, G.H, Chen, J.C, Chen, L.J (1999) Planar defects in epitaxial DySi2−x thin films on (111)Si. Applied Surface Science, 142. 332-335 doi:10.1016/s0169-4332(98)00649-7
Rossow, U., Mantese, L., Yasuda, T., Aspnes, D.E. (1996) Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy. Applied Surface Science, 104. 137-140 doi:10.1016/s0169-4332(96)00134-1
Tappe, T., Chatziparaskewas, A., Schäffer, J., Schlosser, J., Schmalhorst, J., Schmiedeskamp, B. (1996) Medium energy ion scattering (MEIS) studies on Si/GaSb/Si- and Si/CaF2/Si(111) layer systems. Applied Surface Science, 104. 661-668 doi:10.1016/s0169-4332(96)00221-8
Sasaki, Kimihiro, Nakata, Keiichi, Hata, Tomonobu (1997) Epitaxial growth of SiGe thin films by ion-beam sputtering. Applied Surface Science, 113. 43-47 doi:10.1016/s0169-4332(96)00802-1
 
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