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Ventrice, C.A., LaBella, V.P., Ramaswamy, G., Yu, H.-P., Schowalter, L.J. (1996) Hot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy. Applied Surface Science, 104. 274-281 doi:10.1016/s0169-4332(96)00215-2

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Reference TypeJournal (article/letter/editorial)
TitleHot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy
JournalApplied Surface Science
AuthorsVentrice, C.A.Author
LaBella, V.P.Author
Ramaswamy, G.Author
Yu, H.-P.Author
Schowalter, L.J.Author
Year1996 (September)Volume104
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(96)00215-2Search in ResearchGate
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Mindat Ref. ID9898812Long-form Identifiermindat:1:5:9898812:5
GUID0
Full ReferenceVentrice, C.A., LaBella, V.P., Ramaswamy, G., Yu, H.-P., Schowalter, L.J. (1996) Hot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy. Applied Surface Science, 104. 274-281 doi:10.1016/s0169-4332(96)00215-2
Plain TextVentrice, C.A., LaBella, V.P., Ramaswamy, G., Yu, H.-P., Schowalter, L.J. (1996) Hot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy. Applied Surface Science, 104. 274-281 doi:10.1016/s0169-4332(96)00215-2
In(n.d.) Applied Surface Science Vol. 104. Elsevier BV

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Ventrice, C. A., LaBella, V. P., Ramaswamy, G., Yu, H. -P., Schowalter, L. J. (1996) Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy. Physical Review B, 53 (7) 3952-3959 doi:10.1103/physrevb.53.3952
LaBella, V.P., Ventrice, C.A., Schowalter, L.J. (1998) Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures. Applied Surface Science, 123. 213-218 doi:10.1016/s0169-4332(97)00543-6
Kim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1
Baumann, P.K., Nemanich, R.J. (1996) Characterization of cobalt-diamond (100) interfaces: electron affinity and Schottky barrier. Applied Surface Science, 104. 267-273 doi:10.1016/s0169-4332(96)00156-0
Sumiya, Touru, Miura, Tadao, Fujinuma, Haruko, Tanaka, Shun-ichiro (1997) Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy. Applied Surface Science, 117. 329-333 doi:10.1016/s0169-4332(97)80103-1
Kobayashi, Katsuyoshi (1999) Lateral currents in ballistic electron emission microscopy. Applied Surface Science, 144. 580-583 doi:10.1016/s0169-4332(98)00869-1
Borgonjen, E.G., van Bakel, G.P.E.M., Hagen, C.W., Kruit, P. (1997) A novel vacuum electron source based on ballistic electron emission. Applied Surface Science, 111. 165-169 doi:10.1016/s0169-4332(96)00735-0
Lew, A.Y., Yan, C.H., Tu, C.W., Yu, E.T. (1996) Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopy. Applied Surface Science, 104. 522-528 doi:10.1016/s0169-4332(96)00197-3
Sumiya, Touru, Fujinuma, Haruko, Miura, Tadao, Tanaka, Shun-ichiro (1998) Ballistic electron emission microscopy studies of Au/CaF2/n-Si(111) interfaces. Applied Surface Science, 130. 36-40 doi:10.1016/s0169-4332(98)00021-x
Williams, R.H. (1993) Ballistic electron emission microscopy of metal/semiconductor interfaces and heterojunctions. Applied Surface Science, 70. 386-390 doi:10.1016/0169-4332(93)90462-k
Durcan, Chris A., Balsano, Robert, LaBella, Vincent P. (2015) Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy. Journal of Applied Physics, 117 (24). 245306pp. doi:10.1063/1.4922972
 
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