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Shen, G.H, Chen, J.C, Chen, L.J (1999) Planar defects in epitaxial DySi2−x thin films on (111)Si. Applied Surface Science, 142. 332-335 doi:10.1016/s0169-4332(98)00649-7

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Reference TypeJournal (article/letter/editorial)
TitlePlanar defects in epitaxial DySi2−x thin films on (111)Si
JournalApplied Surface Science
AuthorsShen, G.HAuthor
Chen, J.CAuthor
Chen, L.JAuthor
Year1999 (April)Volume142
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00649-7Search in ResearchGate
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Mindat Ref. ID9900965Long-form Identifiermindat:1:5:9900965:6
GUID0
Full ReferenceShen, G.H, Chen, J.C, Chen, L.J (1999) Planar defects in epitaxial DySi2−x thin films on (111)Si. Applied Surface Science, 142. 332-335 doi:10.1016/s0169-4332(98)00649-7
Plain TextShen, G.H, Chen, J.C, Chen, L.J (1999) Planar defects in epitaxial DySi2−x thin films on (111)Si. Applied Surface Science, 142. 332-335 doi:10.1016/s0169-4332(98)00649-7
In(n.d.) Applied Surface Science Vol. 142. Elsevier BV

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Shen, G.H, Chen, J.C, Chen, L.J (1999) The structures and variation of vacancy ordering in epitaxial DySi2−x thin films on (111)Si. Applied Surface Science, 142. 300-304 doi:10.1016/s0169-4332(98)00734-x
Chen, J.C, Shen, G.H, Chen, L.J (1999) Formation of Gd oxide thin films on (111)Si. Applied Surface Science, 142. 120-123 doi:10.1016/s0169-4332(98)00663-1
Chen, J.C, Shen, G.H, Chen, L.J (1999) Interfacial reactions of Gd thin films on (111) and (001)Si. Applied Surface Science, 142. 291-294 doi:10.1016/s0169-4332(98)00639-4
Luo, C.H., Shen, G.H., Chen, L.J. (1997) Vacancy ordering structures in epitaxial RESi2−x thin films on (111)Si and (001)Si. Applied Surface Science, 113. 457-461 doi:10.1016/s0169-4332(96)00806-9
Cheng, S.L, Huang, H.Y, Peng, Y.C, Chen, L.J, Tsui, B.Y, Tsai, C.J, Guo, S.S, Yang, Y.R, Lin, J.T (1999) Formation of TiSi2 thin films on stressed (001)Si substrates. Applied Surface Science, 142. 295-299 doi:10.1016/s0169-4332(98)00733-8
Kim, B.M., Ventrice, C.A., Mercer, T., Overney, R., Schowalter, L.J. (1996) Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces. Applied Surface Science, 104. 409-416 doi:10.1016/s0169-4332(96)00179-1
Galtayries, A, Crucifix, M, Blanchard, G, Terwagne, G, Sporken, R (1999) Preparation and characterisation of mixed oxide (Ce,Zr)O2 thin films on Si (111) substrates. Applied Surface Science, 142. 159-163 doi:10.1016/s0169-4332(98)00667-9
Luo, C.H., Chen, L.J. (1997) Interfacial reactions of ultrahigh vacuum deposited ErSi multilayer thin films. Applied Surface Science, 113. 556-561 doi:10.1016/s0169-4332(96)00800-8
Hung, S.F., Chen, L.J. (1997) The oxidation behaviors of MoSi2 on (111)Si. Applied Surface Science, 113. 600-604 doi:10.1016/s0169-4332(96)00799-4
Lu, H.T, Chueh, Y.L, Chou, L.J, Chen, L.J (2003) Effects of As+-implantation on the formation of iron silicides in Fe thin films on (1 1 1)Si. Applied Surface Science, 212. 204-208 doi:10.1016/s0169-4332(03)00363-5
Shen, G. H., Chen, J. C., Lou, C. H., Cheng, S. L., Chen, L. J. (1998) The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111). Journal of Applied Physics, 84 (7). 3630-3635 doi:10.1063/1.368538
 
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