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Zhang, ZhiYong, Wang, Sheng, Peng, LianMao (2012) High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits. Chinese Science Bulletin, 57 (2). 135-148 doi:10.1007/s11434-011-4791-6

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Reference TypeJournal (article/letter/editorial)
TitleHigh-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits
JournalChinese Science Bulletin
AuthorsZhang, ZhiYongAuthor
Wang, ShengAuthor
Peng, LianMaoAuthor
Year2012 (January)Volume57
Issue2
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11434-011-4791-6Search in ResearchGate
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Mindat Ref. ID7105598Long-form Identifiermindat:1:5:7105598:9
GUID0
Full ReferenceZhang, ZhiYong, Wang, Sheng, Peng, LianMao (2012) High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits. Chinese Science Bulletin, 57 (2). 135-148 doi:10.1007/s11434-011-4791-6
Plain TextZhang, ZhiYong, Wang, Sheng, Peng, LianMao (2012) High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits. Chinese Science Bulletin, 57 (2). 135-148 doi:10.1007/s11434-011-4791-6
In(2012, January) Chinese Science Bulletin Vol. 57 (2) Springer Science and Business Media LLC

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