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Chen, Yan, Mao, LuHong, Guo, WeiLian, Yu, Xin, Zhang, ShiLin, Xie, Sheng (2012) A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process. Chinese Science Bulletin, 57 (7). 716-718 doi:10.1007/s11434-011-4900-6

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Reference TypeJournal (article/letter/editorial)
TitleA novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process
JournalChinese Science Bulletin
AuthorsChen, YanAuthor
Mao, LuHongAuthor
Guo, WeiLianAuthor
Yu, XinAuthor
Zhang, ShiLinAuthor
Xie, ShengAuthor
Year2012 (March)Volume57
Issue7
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11434-011-4900-6Search in ResearchGate
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Mindat Ref. ID7106005Long-form Identifiermindat:1:5:7106005:1
GUID0
Full ReferenceChen, Yan, Mao, LuHong, Guo, WeiLian, Yu, Xin, Zhang, ShiLin, Xie, Sheng (2012) A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process. Chinese Science Bulletin, 57 (7). 716-718 doi:10.1007/s11434-011-4900-6
Plain TextChen, Yan, Mao, LuHong, Guo, WeiLian, Yu, Xin, Zhang, ShiLin, Xie, Sheng (2012) A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process. Chinese Science Bulletin, 57 (7). 716-718 doi:10.1007/s11434-011-4900-6
In(2012, March) Chinese Science Bulletin Vol. 57 (7) Springer Science and Business Media LLC

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