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Nishikitani, Yoshinori, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1989) Carrier mobility enhancement in semiconducting poly(3-methylthiophene) by electrochemical inclusion of cooper. Synthetic Metals, 31 (2). 267-273 doi:10.1016/0379-6779(89)90821-7

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Reference TypeJournal (article/letter/editorial)
TitleCarrier mobility enhancement in semiconducting poly(3-methylthiophene) by electrochemical inclusion of cooper
JournalSynthetic Metals
AuthorsNishikitani, YoshinoriAuthor
Fichou, DenisAuthor
Horowitz, GillesAuthor
Garnier, FrancisAuthor
Year1989 (August)Volume31
Issue2
PublisherElsevier BV
DOIdoi:10.1016/0379-6779(89)90821-7Search in ResearchGate
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Mindat Ref. ID7786757Long-form Identifiermindat:1:5:7786757:1
GUID0
Full ReferenceNishikitani, Yoshinori, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1989) Carrier mobility enhancement in semiconducting poly(3-methylthiophene) by electrochemical inclusion of cooper. Synthetic Metals, 31 (2). 267-273 doi:10.1016/0379-6779(89)90821-7
Plain TextNishikitani, Yoshinori, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1989) Carrier mobility enhancement in semiconducting poly(3-methylthiophene) by electrochemical inclusion of cooper. Synthetic Metals, 31 (2). 267-273 doi:10.1016/0379-6779(89)90821-7
In(1989, August) Synthetic Metals Vol. 31 (2) Elsevier BV

See Also

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Xu, Bai, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1991) Large enhancement of the carrier mobility in semiconducting ?-sexithienylene thin films by pulsed electrochemical inclusion of metal. Advanced Materials, 3. 150-153 doi:10.1002/adma.19910030307
Fichou, D., Horowitz, G., Nishikitani, Y., Garnier, F. (1989) Semiconducting conjugated oligomers for molecular electronics. Synthetic Metals, 28 (1). 723-727 doi:10.1016/0379-6779(89)90596-1
Horowitz, Gilles, Fichou, Denis, Peng, Xuezhou, Garnier, Francis (1991) Thin-film transistors based on alpha-conjugated oligomers. Synthetic Metals, 41 (3). 1127-1130 doi:10.1016/0379-6779(91)91568-u
Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1990) Polaron and bipolaron formation on isolated model thiophene oligomers in solution. Synthetic Metals, 39 (1). 125-131 doi:10.1016/0379-6779(90)90207-2
Fichou, D., Horowitz, G., Nishikitani, Y., Roncali, J., Garnier, F. (1989) Schottky junctions based on vacuum evaporated films of thiophene oligomers. Synthetic Metals, 28 (1). 729-734 doi:10.1016/0379-6779(89)90597-3
Garnier, Francis, Horowitz, Gilles, Fichou, Denis, Yassar, Abderrahim (1996) Molecular order in organic-based field-effect transistors. Synthetic Metals, 81 (2). 163-171 doi:10.1016/s0379-6779(96)03761-7
Xu, Bai, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1991) Preparation of charge-transfer complexes based on thiophene and paraphenylene oligomers as electron donors. Synthetic Metals, 42 (3). 2319-2322 doi:10.1016/0379-6779(91)91371-g
Garnier, F, Horowitz, G, Peng, X.Z, Fichou, D (1991) Structural basis for high carrier mobility in conjugated oligomers. Synthetic Metals, 45 (2). 163-171 doi:10.1016/0379-6779(91)91800-p
Horowitz, Gilles, Peng, Xue-Zhou, Fichou, Denis, Garnier, Francis (1992) Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors. Synthetic Metals, 51 (1). 419-424 doi:10.1016/0379-6779(92)90297-v
Fichou, Denis, Horowitz, Gilles, Xu, Bai, Garnier, Francis (1992) Low temperature optical absorption of polycrystalline thin films of α-quaterthiophene, α-sexithiophene and α-octithiophene, three model oligomers of polythiophene. Synthetic Metals, 48 (2). 167-179 doi:10.1016/0379-6779(92)90059-r
Garnier, F., Horowitz, G., Fichou, D. (1989) Conjugated polymers and oligomers as active material for electronic devices. Synthetic Metals, 28 (1). 705-714 doi:10.1016/0379-6779(89)90594-8
 
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