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Horowitz, Gilles, Peng, Xue-Zhou, Fichou, Denis, Garnier, Francis (1992) Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors. Synthetic Metals, 51 (1). 419-424 doi:10.1016/0379-6779(92)90297-v

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Reference TypeJournal (article/letter/editorial)
TitleRole of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors
JournalSynthetic Metals
AuthorsHorowitz, GillesAuthor
Peng, Xue-ZhouAuthor
Fichou, DenisAuthor
Garnier, FrancisAuthor
Year1992 (September)Volume51
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0379-6779(92)90297-vSearch in ResearchGate
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Mindat Ref. ID7788642Long-form Identifiermindat:1:5:7788642:4
GUID0
Full ReferenceHorowitz, Gilles, Peng, Xue-Zhou, Fichou, Denis, Garnier, Francis (1992) Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors. Synthetic Metals, 51 (1). 419-424 doi:10.1016/0379-6779(92)90297-v
Plain TextHorowitz, Gilles, Peng, Xue-Zhou, Fichou, Denis, Garnier, Francis (1992) Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors. Synthetic Metals, 51 (1). 419-424 doi:10.1016/0379-6779(92)90297-v
In(1992, September) Synthetic Metals Vol. 51 (1) Elsevier BV

See Also

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Horowitz, Gilles, Fichou, Denis, Peng, Xuezhou, Garnier, Francis (1991) Thin-film transistors based on alpha-conjugated oligomers. Synthetic Metals, 41 (3). 1127-1130 doi:10.1016/0379-6779(91)91568-u
Garnier, Francis, Horowitz, Gilles, Fichou, Denis, Yassar, Abderrahim (1996) Molecular order in organic-based field-effect transistors. Synthetic Metals, 81 (2). 163-171 doi:10.1016/s0379-6779(96)03761-7
Fichou, Denis, Horowitz, Gilles, Xu, Bai, Garnier, Francis (1992) Low temperature optical absorption of polycrystalline thin films of α-quaterthiophene, α-sexithiophene and α-octithiophene, three model oligomers of polythiophene. Synthetic Metals, 48 (2). 167-179 doi:10.1016/0379-6779(92)90059-r
Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1990) Polaron and bipolaron formation on isolated model thiophene oligomers in solution. Synthetic Metals, 39 (1). 125-131 doi:10.1016/0379-6779(90)90207-2
Xu, Bai, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1991) Preparation of charge-transfer complexes based on thiophene and paraphenylene oligomers as electron donors. Synthetic Metals, 42 (3). 2319-2322 doi:10.1016/0379-6779(91)91371-g
Nishikitani, Yoshinori, Fichou, Denis, Horowitz, Gilles, Garnier, Francis (1989) Carrier mobility enhancement in semiconducting poly(3-methylthiophene) by electrochemical inclusion of cooper. Synthetic Metals, 31 (2). 267-273 doi:10.1016/0379-6779(89)90821-7
Horowitz, Gilles, Deloffre, Françoise, Garnier, Francis, Hajlaoui, Riadh, Hmyene, Mohamed, Yassar, Abderrahim (1993) All-organic field-effect transistors made of π-conjugated oligomers and polymeric insulators. Synthetic Metals, 54 (1). 435-445 doi:10.1016/0379-6779(93)91089-k
Peng, Xuezhou, Horowitz, Gilles, Fichou, Denis, Garnier, Francis (1990) All‐organic thin‐film transistors made of alpha‐sexithienyl semiconducting and various polymeric insulating layers. Applied Physics Letters, 57 (19). 2013-2015 doi:10.1063/1.103994
Garnier, F, Horowitz, G, Peng, X.Z, Fichou, D (1991) Structural basis for high carrier mobility in conjugated oligomers. Synthetic Metals, 45 (2). 163-171 doi:10.1016/0379-6779(91)91800-p
Fichou, D., Horowitz, G., Nishikitani, Y., Garnier, F. (1989) Semiconducting conjugated oligomers for molecular electronics. Synthetic Metals, 28 (1). 723-727 doi:10.1016/0379-6779(89)90596-1
Garnier, Francis, Horowitz, Gilles, Peng, Xuezhou, Fichou, Denis (1990) An all-organic "soft" thin film transistor with very high carrier mobility. Advanced Materials, 2. 592-594 doi:10.1002/adma.19900021207
 
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