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Zhang, Yinxia, Wang, Dong, Gao, Wei, Kang, Renke (2011) Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding. Rare Metals, 30. 278-281 doi:10.1007/s12598-011-0383-5

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Reference TypeJournal (article/letter/editorial)
TitleResidual stress analysis on silicon wafer surface layers induced by ultra-precision grinding
JournalRare Metals
AuthorsZhang, YinxiaAuthor
Wang, DongAuthor
Gao, WeiAuthor
Kang, RenkeAuthor
Year2011 (June)Volume30
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s12598-011-0383-5Search in ResearchGate
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Mindat Ref. ID8049109Long-form Identifiermindat:1:5:8049109:5
GUID0
Full ReferenceZhang, Yinxia, Wang, Dong, Gao, Wei, Kang, Renke (2011) Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding. Rare Metals, 30. 278-281 doi:10.1007/s12598-011-0383-5
Plain TextZhang, Yinxia, Wang, Dong, Gao, Wei, Kang, Renke (2011) Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding. Rare Metals, 30. 278-281 doi:10.1007/s12598-011-0383-5
In(2011) Rare Metals Vol. 30. Springer Science and Business Media LLC

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