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Su, Yuanjun, Dond, Chuang, Zhu, Ming, Xu, Jun, Fan, Penghui (2012) Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering. Rare Metals, 31. 193-197 doi:10.1007/s12598-012-0490-y

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Reference TypeJournal (article/letter/editorial)
TitleEffects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering
JournalRare Metals
AuthorsSu, YuanjunAuthor
Dond, ChuangAuthor
Zhu, MingAuthor
Xu, JunAuthor
Fan, PenghuiAuthor
Year2012 (April)Volume31
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s12598-012-0490-ySearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID8049315Long-form Identifiermindat:1:5:8049315:4
GUID0
Full ReferenceSu, Yuanjun, Dond, Chuang, Zhu, Ming, Xu, Jun, Fan, Penghui (2012) Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering. Rare Metals, 31. 193-197 doi:10.1007/s12598-012-0490-y
Plain TextSu, Yuanjun, Dond, Chuang, Zhu, Ming, Xu, Jun, Fan, Penghui (2012) Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering. Rare Metals, 31. 193-197 doi:10.1007/s12598-012-0490-y
In(2012) Rare Metals Vol. 31. Springer Science and Business Media LLC

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