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Fay, B., Kino, G. S. (1969) A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs. Applied Physics Letters, 15 (10). 337-339 doi:10.1063/1.1652849

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Reference TypeJournal (article/letter/editorial)
TitleA NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs
JournalApplied Physics Letters
AuthorsFay, B.Author
Kino, G. S.Author
Year1969 (November 15)Volume15
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1652849Search in ResearchGate
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Mindat Ref. ID8453668Long-form Identifiermindat:1:5:8453668:8
GUID0
Full ReferenceFay, B., Kino, G. S. (1969) A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs. Applied Physics Letters, 15 (10). 337-339 doi:10.1063/1.1652849
Plain TextFay, B., Kino, G. S. (1969) A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs. Applied Physics Letters, 15 (10). 337-339 doi:10.1063/1.1652849
In(1969, November) Applied Physics Letters Vol. 15 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Ruch, J. G., Kino, G. S. (1967) MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE. Applied Physics Letters, 10 (2). 40-42 doi:10.1063/1.1754837
Neukermans, A., Kino, G. S. (1970) MEASUREMENT OF VELOCITY‐FIELD CHARACTERISTICS OF ELECTRONS IN InSb AT HIGH FIELDS. Applied Physics Letters, 17 (3). 102-104 doi:10.1063/1.1653323
Glover, G. H. (1971) Microwave Measurement of the Velocity—Electric‐Field Characteristic of Inhomogeneous Epitaxial GaAs with Conducting Substrate. Journal of Applied Physics, 42 (10). 4025-4034 doi:10.1063/1.1659720
Neukermans, A., Kino, G. S. (1973) Absolute Measurement of the Electron Velocity-Field Characteristic of InSb. Physical Review B, 7 (6) 2703-2709 doi:10.1103/physrevb.7.2703
Liang, K., Bennett, S. D., Khuri‐Yakub, B. T., Kino, G. S. (1982) Precision measurement of Rayleigh wave velocity perturbation. Applied Physics Letters, 41 (12). 1124-1126 doi:10.1063/1.93423
Glover, G. H. (1972) Microwave Measurement of the Velocity‐Field Characteristic of n‐Type InP. Applied Physics Letters, 20 (6). 224-225 doi:10.1063/1.1654120
Glover, G. H. (1972) Addendum to ``Microwave Measurement of the Velocity—Electric Field Characteristic of Inhomogeneous Epitaxial GaAs with Conducting Substrate''. Journal of Applied Physics, 43 (6). 2905 doi:10.1063/1.1661619
Chang, D. M., Ruch, J. G. (1968) MEASUREMENT OF THE VELOCITY FIELD CHARACTERISTIC OF ELECTRONS IN GERMANIUM. Applied Physics Letters, 12 (3). 111-112 doi:10.1063/1.1651896
Neukermans, A., Kino, G. S. (1973) Measurement of the Electron Velocity-Field Characteristics in Germanium Using a New Technique. Physical Review B, 7 (6) 2693-2703 doi:10.1103/physrevb.7.2693
Glover, G. H. (1971) ERROR IN MICROWAVE MEASUREMENTS OF THE VELOCITY‐FIELD CHARACTERISTIC OF n‐TYPE GaAs DUE TO ENERGY RELAXATION EFFECTS. Applied Physics Letters, 18 (7). 290-291 doi:10.1063/1.1653669
Glover, Gary H. (1970) EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OFn‐TYPE GaAs. Applied Physics Letters, 17 (11). 472-474 doi:10.1063/1.1653273
 
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