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Glover, Gary H. (1970) EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OFn‐TYPE GaAs. Applied Physics Letters, 17 (11). 472-474 doi:10.1063/1.1653273

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Reference TypeJournal (article/letter/editorial)
TitleEFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OFn‐TYPE GaAs
JournalApplied Physics Letters
AuthorsGlover, Gary H.Author
Year1970 (December)Volume17
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1653273Search in ResearchGate
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Mindat Ref. ID8454562Long-form Identifiermindat:1:5:8454562:2
GUID0
Full ReferenceGlover, Gary H. (1970) EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OFn‐TYPE GaAs. Applied Physics Letters, 17 (11). 472-474 doi:10.1063/1.1653273
Plain TextGlover, Gary H. (1970) EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OFn‐TYPE GaAs. Applied Physics Letters, 17 (11). 472-474 doi:10.1063/1.1653273
In(1970, December) Applied Physics Letters Vol. 17 (11) AIP Publishing

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Glover, G. H. (1971) ERROR IN MICROWAVE MEASUREMENTS OF THE VELOCITY‐FIELD CHARACTERISTIC OF n‐TYPE GaAs DUE TO ENERGY RELAXATION EFFECTS. Applied Physics Letters, 18 (7). 290-291 doi:10.1063/1.1653669
Glover, G. H. (1971) Microwave Measurement of the Velocity—Electric‐Field Characteristic of Inhomogeneous Epitaxial GaAs with Conducting Substrate. Journal of Applied Physics, 42 (10). 4025-4034 doi:10.1063/1.1659720
Glover, G. H. (1972) Addendum to ``Microwave Measurement of the Velocity—Electric Field Characteristic of Inhomogeneous Epitaxial GaAs with Conducting Substrate''. Journal of Applied Physics, 43 (6). 2905 doi:10.1063/1.1661619
Glover, G. H. (1972) Microwave Measurement of the Velocity‐Field Characteristic of n‐Type InP. Applied Physics Letters, 20 (6). 224-225 doi:10.1063/1.1654120
Hamilton, D. K. (1978) Subthreshold velocity‐field characteristic ofn‐type indium phosphide at 77 K. Applied Physics Letters, 32 (10). 682-683 doi:10.1063/1.89855
Murray, J. J., Deal, M. D., Stevenson, D. A. (1990) Influence of background doping and implant damage on the diffusion of implanted silicon in GaAs. Applied Physics Letters, 56 (5). 472-474 doi:10.1063/1.102769
Fay, B., Kino, G. S. (1969) A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs. Applied Physics Letters, 15 (10). 337-339 doi:10.1063/1.1652849
Champlin, Keith S., Glover, Gary H. (1968) TEMPERATURE DEPENDENCE OF THE MICROWAVE DIELECTRIC CONSTANT OF THE GaAs LATTICE. Applied Physics Letters, 12 (7). 231-232 doi:10.1063/1.1651969
Danan, G., Ladan, F. R., Mollot, F., Planel, R. (1987) Longitudinal electric field effects on GaAs‐AlAs type‐II superlattices. Applied Physics Letters, 51 (20). 1605-1607 doi:10.1063/1.98569
Champlin, Keith S., Glover, Gary H. (1966) Influence of Waveguide Contact on Measured Complex Permittivity of Semiconductors. Journal of Applied Physics, 37 (6). 2355-2360 doi:10.1063/1.1708817
Kaiser, W., Lessing, H. (1963) EFFECTS OF AN ELECTRIC FIELD ON THE LASER EMISSION OF RUBY. Applied Physics Letters, 2 (11). 206-208 doi:10.1063/1.1753736
 
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