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Hovel, H. J., Cuomo, J. J. (1972) Electrical and Optical Properties of rf‐Sputtered GaN and InN. Applied Physics Letters, 20 (2). 71-73 doi:10.1063/1.1654051

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and Optical Properties of rf‐Sputtered GaN and InN
JournalApplied Physics Letters
AuthorsHovel, H. J.Author
Cuomo, J. J.Author
Year1972 (January 15)Volume20
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1654051Search in ResearchGate
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Mindat Ref. ID8456165Long-form Identifiermindat:1:5:8456165:7
GUID0
Full ReferenceHovel, H. J., Cuomo, J. J. (1972) Electrical and Optical Properties of rf‐Sputtered GaN and InN. Applied Physics Letters, 20 (2). 71-73 doi:10.1063/1.1654051
Plain TextHovel, H. J., Cuomo, J. J. (1972) Electrical and Optical Properties of rf‐Sputtered GaN and InN. Applied Physics Letters, 20 (2). 71-73 doi:10.1063/1.1654051
In(1972, January) Applied Physics Letters Vol. 20 (2) AIP Publishing

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Mayadas, A. F., Laibowitz, R. B., Cuomo, J. J. (1972) Electrical Characteristics of rf‐Sputtered Single‐Crystal Niobium Films. Journal of Applied Physics, 43 (3). 1287-1289 doi:10.1063/1.1661258
Knox-Davies, E. C., Henley, S. J., Shannon, J. M., Silva, S. R. P. (2006) Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation. Journal of Applied Physics, 99 (3). 36108pp. doi:10.1063/1.2171780
Li, J., Nam, K. B., Lin, J. Y., Jiang, H. X. (2001) Optical and electrical properties of Al-rich AlGaN alloys. Applied Physics Letters, 79 (20). 3245-3247 doi:10.1063/1.1418255
Zavada, J. M., Wilson, R. G., Abernathy, C. R., Pearton, S. J. (1994) Hydrogenation of GaN, AlN, and InN. Applied Physics Letters, 64 (20). 2724-2726 doi:10.1063/1.111455
Cuomo, J.J., Sadagopan, V., DeLuca, J., Chaudhari, P., Rosenberg, R. (1972) Growth of uniaxial magnetic garnet films by rf sputtering. Applied Physics Letters, 21 (12). 581-584 doi:10.1063/1.1654264
Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., Poehler, T. O. (1990) Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method. Journal of Applied Physics, 68 (4). 1541-1544 doi:10.1063/1.346630
Shirafuji, J., Matsui, H., Narukawa, A., Inuishi, Y. (1982) Morphological fluctuation and electrical properties of sputtered hydrogenated silicon. Applied Physics Letters, 41 (6). 535-537 doi:10.1063/1.93580
Thorpe, T. P., Qadri, S. B., Wolf, S. A., Claassen, J. H. (1986) Electrical and optical properties of sputtered TiNxfilms as a function of substrate deposition temperature. Applied Physics Letters, 49 (19). 1239-1241 doi:10.1063/1.97425
Szczyrbowski, J., Dietrich, A., Hoffmann, H. (1983) Optical and electrical properties of RF-sputtered indium–tin oxide films. physica status solidi (a), 78 (1). 243-252 doi:10.1002/pssa.2210780129
Hovel, H. J. (1970) SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONS. Applied Physics Letters, 17 (4). 141-143 doi:10.1063/1.1653340
Tsuge, H., Houck, L. L., Nordman, J. E. (1983) Nb3Sn‐Pb Josephson tunnel junctions using patterned rf sputtered material and rf oxidation. Applied Physics Letters, 43 (6). 606-608 doi:10.1063/1.94402
 
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