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Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., Poehler, T. O. (1990) Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method. Journal of Applied Physics, 68 (4). 1541-1544 doi:10.1063/1.346630

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method
JournalJournal of Applied Physics
AuthorsKistenmacher, T. J.Author
Bryden, W. A.Author
Morgan, J. S.Author
Poehler, T. O.Author
Year1990 (August 15)Volume68
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.346630Search in ResearchGate
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Mindat Ref. ID5048107Long-form Identifiermindat:1:5:5048107:3
GUID0
Full ReferenceKistenmacher, T. J., Bryden, W. A., Morgan, J. S., Poehler, T. O. (1990) Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method. Journal of Applied Physics, 68 (4). 1541-1544 doi:10.1063/1.346630
Plain TextKistenmacher, T. J., Bryden, W. A., Morgan, J. S., Poehler, T. O. (1990) Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method. Journal of Applied Physics, 68 (4). 1541-1544 doi:10.1063/1.346630
In(1990, August) Journal of Applied Physics Vol. 68 (4) AIP Publishing

See Also

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Kistenmacher, T. J., Ecelberger, S. A., Bryden, W. A. (1993) Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Journal of Applied Physics, 74 (3). 1684-1691 doi:10.1063/1.354822
Kistenmacher, Thomas J., Bryden, Wayne A. (1993) Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN‐nucleated (111) silicon and (00.1) sapphire. Applied Physics Letters, 62 (11). 1221-1223 doi:10.1063/1.108740
Bryden, Wayne A., Ecelberger, Scott A., Kistenmacher, Thomas J. (1994) Heteroepitaxial growth of InN on AlN‐nucleated (00.1) sapphire by ultrahigh vacuum electron cyclotron resonance‐assisted reactive magnetron sputtering. Applied Physics Letters, 64 (21). 2864-2866 doi:10.1063/1.111451
Bryden, W. A., Morgan, J. S., Kistenmacher, T. J., Moorjani, K. (1987) Correlation of electrical transport and magnetism in amorphous Mn‐B alloys. Journal of Applied Physics, 61 (8). 3661-3663 doi:10.1063/1.338680
Shuskus, A. J., Reeder, T. M., Paradis, E. L. (1974) rf‐sputtered aluminum nitride films on sapphire. Applied Physics Letters, 24 (4). 155-156 doi:10.1063/1.1655132
Wickenden, D. K., Miragliotta, J. A., Bryden, W. A., Kistenmacher, T. J. (1994) Thermally annealed GaN nucleation layers and the device‐quality metal organic chemical vapor deposition growth of Si‐doped GaN films on (00.1) sapphire. Journal of Applied Physics, 75 (11). 7585-7587 doi:10.1063/1.356590
Kistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190
Hovel, H. J., Cuomo, J. J. (1972) Electrical and Optical Properties of rf‐Sputtered GaN and InN. Applied Physics Letters, 20 (2). 71-73 doi:10.1063/1.1654051
Wickenden, D. K., Bargeron, C. B., Bryden, W. A., Miragliotta, J., Kistenmacher, T. J. (1994) High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 65 (16). 2024-2026 doi:10.1063/1.112782
King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Wang, T., Parbrook, P. J., Lu, Hai, Schaff, W. J. (2007) Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 90 (13). 132105pp. doi:10.1063/1.2716994
Inushima, T., Higashiwaki, M., Matsui, T. (2003) Optical properties of Si-doped InN grown on sapphire (0001) Physical Review B, 68 (23) doi:10.1103/physrevb.68.235204
 
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