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Kistenmacher, T. J., Ecelberger, S. A., Bryden, W. A. (1993) Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Journal of Applied Physics, 74 (3). 1684-1691 doi:10.1063/1.354822

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses
JournalJournal of Applied Physics
AuthorsKistenmacher, T. J.Author
Ecelberger, S. A.Author
Bryden, W. A.Author
Year1993 (August)Volume74
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.354822Search in ResearchGate
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Mindat Ref. ID5065022Long-form Identifiermindat:1:5:5065022:0
GUID0
Full ReferenceKistenmacher, T. J., Ecelberger, S. A., Bryden, W. A. (1993) Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Journal of Applied Physics, 74 (3). 1684-1691 doi:10.1063/1.354822
Plain TextKistenmacher, T. J., Ecelberger, S. A., Bryden, W. A. (1993) Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Journal of Applied Physics, 74 (3). 1684-1691 doi:10.1063/1.354822
In(1993, August) Journal of Applied Physics Vol. 74 (3) AIP Publishing

See Also

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Bryden, Wayne A., Ecelberger, Scott A., Kistenmacher, Thomas J. (1994) Heteroepitaxial growth of InN on AlN‐nucleated (00.1) sapphire by ultrahigh vacuum electron cyclotron resonance‐assisted reactive magnetron sputtering. Applied Physics Letters, 64 (21). 2864-2866 doi:10.1063/1.111451
Kistenmacher, Thomas J., Bryden, Wayne A. (1993) Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN‐nucleated (111) silicon and (00.1) sapphire. Applied Physics Letters, 62 (11). 1221-1223 doi:10.1063/1.108740
Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., Poehler, T. O. (1990) Characterization of rf‐sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x‐ray precession method. Journal of Applied Physics, 68 (4). 1541-1544 doi:10.1063/1.346630
Kistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190
Wickenden, D. K., Miragliotta, J. A., Bryden, W. A., Kistenmacher, T. J. (1994) Thermally annealed GaN nucleation layers and the device‐quality metal organic chemical vapor deposition growth of Si‐doped GaN films on (00.1) sapphire. Journal of Applied Physics, 75 (11). 7585-7587 doi:10.1063/1.356590
Wickenden, D. K., Bargeron, C. B., Bryden, W. A., Miragliotta, J., Kistenmacher, T. J. (1994) High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 65 (16). 2024-2026 doi:10.1063/1.112782
Tsai, W., Delfino, M., Fair, J. A., Hodul, D. (1993) Temperature dependence of the electrical resistivity of reactively sputtered TiN films. Journal of Applied Physics, 73 (9). 4462-4467 doi:10.1063/1.352785
Kistenmacher, T. J., Wickenden, D. K., Hawley, M. E., Leavitt, R. P. (1995) Real and reciprocal space mapping of the mosaic dispersion in self‐nucleated AlxGa1−xN thin films on (00.1) sapphire. Applied Physics Letters, 67 (25). 3771-3773 doi:10.1063/1.115378
Lei, T., Ludwig, K. F., Moustakas, T. D. (1993) Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates. Journal of Applied Physics, 74 (7). 4430-4437 doi:10.1063/1.354414
Bramley, A. P., Morley, S. M., Grovenor, C. R. M., Pecz, B. (1995) Buffer layer/film interactions in the growth of Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire. Applied Physics Letters, 66 (4). 517-519 doi:10.1063/1.114075
Kumar, Sunil, Tansley, T. L. (1995) Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AlN Thin Films. Japanese Journal of Applied Physics, 34. 4154-4158 doi:10.1143/jjap.34.4154
 
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