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Kistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190

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Reference TypeJournal (article/letter/editorial)
TitleOvergrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
JournalApplied Physics Letters
AuthorsKistenmacher, Thomas J.Author
Bryden, Wayne A.Author
Year1991 (October 7)Volume59
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.106190Search in ResearchGate
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Mindat Ref. ID8495841Long-form Identifiermindat:1:5:8495841:9
GUID0
Full ReferenceKistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190
Plain TextKistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190
In(1991, October) Applied Physics Letters Vol. 59 (15) AIP Publishing

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Bryden, Wayne A., Ecelberger, Scott A., Kistenmacher, Thomas J. (1994) Heteroepitaxial growth of InN on AlN‐nucleated (00.1) sapphire by ultrahigh vacuum electron cyclotron resonance‐assisted reactive magnetron sputtering. Applied Physics Letters, 64 (21). 2864-2866 doi:10.1063/1.111451
Kistenmacher, Thomas J., Bryden, Wayne A. (1993) Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN‐nucleated (111) silicon and (00.1) sapphire. Applied Physics Letters, 62 (11). 1221-1223 doi:10.1063/1.108740
Wickenden, D. K., Bargeron, C. B., Bryden, W. A., Miragliotta, J., Kistenmacher, T. J. (1994) High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 65 (16). 2024-2026 doi:10.1063/1.112782
Meng, W. J., Heremans, J., Cheng, Y. T. (1991) Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering. Applied Physics Letters, 59 (17). 2097-2099 doi:10.1063/1.106092
Deniz, D., Karabacak, T., Harper, J. M. E. (2008) Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering. Journal of Applied Physics, 103 (8). 83553pp. doi:10.1063/1.2917063
Kistenmacher, T. J., Wickenden, D. K., Hawley, M. E., Leavitt, R. P. (1995) Real and reciprocal space mapping of the mosaic dispersion in self‐nucleated AlxGa1−xN thin films on (00.1) sapphire. Applied Physics Letters, 67 (25). 3771-3773 doi:10.1063/1.115378
Maruyama, Toshiro, Morishita, Tomonori (1994) Indium nitride thin films prepared by radio‐frequency reactive sputtering. Journal of Applied Physics, 76 (10). 5809-5812 doi:10.1063/1.358480
Yoshida, S., Misawa, S., Itoh, A. (1975) Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation. Applied Physics Letters, 26 (8). 461-462 doi:10.1063/1.88210
Kistenmacher, T. J., Ecelberger, S. A., Bryden, W. A. (1993) Structural and electrical properties of reactively sputtered InN thin films on AlN‐buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses. Journal of Applied Physics, 74 (3). 1684-1691 doi:10.1063/1.354822
Kim, Joo Han, Chung, Ki Woong (1998) Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering. Journal of Applied Physics, 83 (11). 5831-5839 doi:10.1063/1.367440
Sugimoto, Iwao, Nakano, Satoko (1993) Helium‐excited reactive magnetron sputtering for stress‐free silicon nitride films. Applied Physics Letters, 62 (17). 2116-2118 doi:10.1063/1.109444
 
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