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Deniz, D., Karabacak, T., Harper, J. M. E. (2008) Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering. Journal of Applied Physics, 103 (8). 83553pp. doi:10.1063/1.2917063

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Reference TypeJournal (article/letter/editorial)
TitleCompetitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering
JournalJournal of Applied Physics
AuthorsDeniz, D.Author
Karabacak, T.Author
Harper, J. M. E.Author
Year2008 (April 15)Volume103
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.2917063Search in ResearchGate
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Mindat Ref. ID5156793Long-form Identifiermindat:1:5:5156793:6
GUID0
Full ReferenceDeniz, D., Karabacak, T., Harper, J. M. E. (2008) Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering. Journal of Applied Physics, 103 (8). 83553pp. doi:10.1063/1.2917063
Plain TextDeniz, D., Karabacak, T., Harper, J. M. E. (2008) Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering. Journal of Applied Physics, 103 (8). 83553pp. doi:10.1063/1.2917063
In(2008, April) Journal of Applied Physics Vol. 103 (8) AIP Publishing

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Deniz, D., Harper, J. M. E. (2008) Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering. Journal of Applied Physics, 104 (6). 63519pp. doi:10.1063/1.2980325
Kistenmacher, Thomas J., Bryden, Wayne A. (1991) Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering. Applied Physics Letters, 59 (15). 1844-1846 doi:10.1063/1.106190
Kim, J.-Y., Nielsen, M. C., Rymaszewski, E. J., Lu, T.-M. (2000) Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering. Journal of Applied Physics, 87 (3). 1448-1452 doi:10.1063/1.372033
Kim, Joo Han, Chung, Ki Woong (1998) Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering. Journal of Applied Physics, 83 (11). 5831-5839 doi:10.1063/1.367440
Dogheche, E., RĂ©miens, D., Boudrioua, A., Loulergue, J. C. (1999) Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering. Applied Physics Letters, 74 (9). 1209-1211 doi:10.1063/1.123501
Valcheva, E., Birch, J., Persson, P. O. Ă…., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
Oezer, D., Ramírez, G., Rodil, S. E., Sanjinés, R. (2012) Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering. Journal of Applied Physics, 112 (11). 114302pp. doi:10.1063/1.4766904
Shen, Y. G., Mai, Y. W., McKenzie, D. R., Zhang, Q. C., McFall, W. D., McBride, W. E. (2000) Composition, residual stress, and structural properties of thin tungsten nitride films deposited by reactive magnetron sputtering. Journal of Applied Physics, 88 (3). 1380-1388 doi:10.1063/1.373827
Beckers, M., Schell, N., Martins, R. M. S., Mücklich, A., Möller, W., Hultman, L. (2007) Nucleation and growth of Ti2AlN thin films deposited by reactive magnetron sputtering onto MgO(111). Journal of Applied Physics, 102 (7). 74916pp. doi:10.1063/1.2786871
Dubois, Marc-Alexandre, Muralt, Paul (2001) Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering. Journal of Applied Physics, 89 (11). 6389-6395 doi:10.1063/1.1359162
Laurikaitis, M, Burinskas, S, Dudonis, J, MilÄŤius, D (2008) Physical properties of zirconium oxynitride films deposited by reactive magnetron sputtering. Journal of Physics: Conference Series, 100. 82051pp. doi:10.1088/1742-6596/100/8/082051
 
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