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Picraux, S. T. (1972) Ion‐Channeling Studies of Epitaxial Layers. Applied Physics Letters, 20 (2). 91-93 doi:10.1063/1.1654061

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Reference TypeJournal (article/letter/editorial)
TitleIon‐Channeling Studies of Epitaxial Layers
JournalApplied Physics Letters
AuthorsPicraux, S. T.Author
Year1972 (January 15)Volume20
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1654061Search in ResearchGate
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Mindat Ref. ID8456185Long-form Identifiermindat:1:5:8456185:1
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Full ReferencePicraux, S. T. (1972) Ion‐Channeling Studies of Epitaxial Layers. Applied Physics Letters, 20 (2). 91-93 doi:10.1063/1.1654061
Plain TextPicraux, S. T. (1972) Ion‐Channeling Studies of Epitaxial Layers. Applied Physics Letters, 20 (2). 91-93 doi:10.1063/1.1654061
In(1972, January) Applied Physics Letters Vol. 20 (2) AIP Publishing

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Picraux, S. T. (1973) Ion channeling studies of the crystalline perfection of epitaxial layers. Journal of Applied Physics, 44 (2). 587-593 doi:10.1063/1.1662229
Dexter, R. J., Watelski, S. B., Picraux, S. T. (1973) Epitaxial silicon layers grown on ion‐implanted silicon nitride layers. Applied Physics Letters, 23 (8). 455-457 doi:10.1063/1.1654956
Picraux, S. T., Dawson, L. R., Osbourn, G. C., Chu, W. K. (1983) Ion channeling studies of InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 43 (10). 930-932 doi:10.1063/1.94184
Picraux, S. T., Stein, H. J. (1974) Ion‐channeling and optical absorption studies of implantation disorder in germanium. Journal of Applied Physics, 45 (9). 3784-3788 doi:10.1063/1.1663860
Picraux, S. T., Thomas, G. J. (1973) Correlation of ion channeling and electron microscopy results in the evaluation of heteroepitaxial silicon. Journal of Applied Physics, 44 (2). 594-602 doi:10.1063/1.1662230
Chason, E., Bedrossian, P., Horn, K. M., Tsao, J. Y., Picraux, S. T. (1990) Ion beam enhanced epitaxial growth of Ge (001). Applied Physics Letters, 57 (17). 1793-1795 doi:10.1063/1.104024
Picraux, S. T., Bo/ttiger, J., Rud, N. (1976) Profile studies of hydrogen trapping in metals due to ion damage. Applied Physics Letters, 28 (4). 179-181 doi:10.1063/1.88715
Knapp, J. A., Picraux, S. T. (1986) Epitaxial growth of rare‐earth silicides on (111) Si. Applied Physics Letters, 48 (7). 466-468 doi:10.1063/1.96532
Picraux, S. T., Dawson, L. R., Osbourn, G. C., Biefeld, R. M., Chu, W. K. (1983) Strain measurements by channeling angular scans. Applied Physics Letters, 43 (11). 1020-1022 doi:10.1063/1.94214
Venkatesan, T., Elman, B. S., Braunstein, G., Dresselhaus, M. S., Dresselhaus, G. (1984) Ion channeling studies of regrowth kinetics of disordered surface layers on graphite. Journal of Applied Physics, 56 (11). 3232-3240 doi:10.1063/1.333842
Ingole, S., Aella, P., Hearne, Sean J., Picraux, S. T. (2007) Directed assembly of nanowire contacts using electrodeposition. Applied Physics Letters, 91 (3). 33106pp. doi:10.1063/1.2757609
 
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