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Knapp, J. A., Picraux, S. T. (1986) Epitaxial growth of rare‐earth silicides on (111) Si. Applied Physics Letters, 48 (7). 466-468 doi:10.1063/1.96532

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of rare‐earth silicides on (111) Si
JournalApplied Physics Letters
AuthorsKnapp, J. A.Author
Picraux, S. T.Author
Year1986 (February 17)Volume48
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.96532Search in ResearchGate
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Mindat Ref. ID8478103Long-form Identifiermindat:1:5:8478103:9
GUID0
Full ReferenceKnapp, J. A., Picraux, S. T. (1986) Epitaxial growth of rare‐earth silicides on (111) Si. Applied Physics Letters, 48 (7). 466-468 doi:10.1063/1.96532
Plain TextKnapp, J. A., Picraux, S. T. (1986) Epitaxial growth of rare‐earth silicides on (111) Si. Applied Physics Letters, 48 (7). 466-468 doi:10.1063/1.96532
In(1986, February) Applied Physics Letters Vol. 48 (7) AIP Publishing

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Knapp, J. A., Picraux, S. T. (1981) Microsecond time‐scale Si regrowth using a line‐source electron beam. Applied Physics Letters, 38 (11). 873-875 doi:10.1063/1.92204
Yoo, Jinkyoung, Dayeh, Shadi A., Tang, Wei, Picraux, S. T. (2013) Epitaxial growth of radial Si p-i-n junctions for photovoltaic applications. Applied Physics Letters, 102 (9). 93113pp. doi:10.1063/1.4794541
Delafond, J., Picraux, S. T., Knapp, J. A. (1981) Low‐temperature ion beam mixing of Al‐Sb. Applied Physics Letters, 38 (4). 237-240 doi:10.1063/1.92329
Phillips, Julia M., Augustyniak, W. M. (1986) Growth of an epitaxial insulator‐metal‐semiconductor structure on Si by molecular beam epitaxy. Applied Physics Letters, 48 (7). 463-465 doi:10.1063/1.96531
Kwo, J., Hong, M., Nakahara, S. (1986) Growth of rare‐earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium. Applied Physics Letters, 49 (6). 319-321 doi:10.1063/1.97155
Park, R. M., Mar, H. A. (1986) Molecular beam epitaxial growth of high quality ZnSe on (100) Si. Applied Physics Letters, 48 (8). 529-531 doi:10.1063/1.96496
Knapp, J. A., Picraux, S. T., Wu, C. S., Lau, S. S. (1984) Erbium silicide formation using a line‐source electron beam. Applied Physics Letters, 44 (8). 747-749 doi:10.1063/1.94903
Meng, W. J., Heremans, J., Cheng, Y. T. (1991) Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering. Applied Physics Letters, 59 (17). 2097-2099 doi:10.1063/1.106092
Picraux, S. T. (1972) Ion‐Channeling Studies of Epitaxial Layers. Applied Physics Letters, 20 (2). 91-93 doi:10.1063/1.1654061
Chang, Y. S., Chou, M. L. (1990) Formation and structure of epitaxial ruthenium silicides on (111)Si. Journal of Applied Physics, 68 (5). 2411-2414 doi:10.1063/1.346500
Chason, E., Bedrossian, P., Horn, K. M., Tsao, J. Y., Picraux, S. T. (1990) Ion beam enhanced epitaxial growth of Ge (001). Applied Physics Letters, 57 (17). 1793-1795 doi:10.1063/1.104024
 
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