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Ziegler, J.F., Crowder, B.L., Cole, G.W., Baglin, J.E.E., Masters, B.J. (1972) Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction. Applied Physics Letters, 21 (1). 16-17 doi:10.1063/1.1654197

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Reference TypeJournal (article/letter/editorial)
TitleBoron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction
JournalApplied Physics Letters
AuthorsZiegler, J.F.Author
Crowder, B.L.Author
Cole, G.W.Author
Baglin, J.E.E.Author
Masters, B.J.Author
Year1972 (July)Volume21
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1654197Search in ResearchGate
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Mindat Ref. ID8456475Long-form Identifiermindat:1:5:8456475:1
GUID0
Full ReferenceZiegler, J.F., Crowder, B.L., Cole, G.W., Baglin, J.E.E., Masters, B.J. (1972) Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction. Applied Physics Letters, 21 (1). 16-17 doi:10.1063/1.1654197
Plain TextZiegler, J.F., Crowder, B.L., Cole, G.W., Baglin, J.E.E., Masters, B.J. (1972) Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction. Applied Physics Letters, 21 (1). 16-17 doi:10.1063/1.1654197
In(1972, July) Applied Physics Letters Vol. 21 (1) AIP Publishing

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Ziegler, J.F., Cole, G.W., Baglin, J.E.E. (1972) Discovery of anomalous base regions in transistors. Applied Physics Letters, 21 (4). 177-179 doi:10.1063/1.1654333
Chu, W.K., Crowder, B.L., Mayer, J.W., Ziegler, J.F. (1973) Range distribution of implanted ions in SiO2, Si3N4, and Al2O3. Applied Physics Letters, 22 (10). 490-492 doi:10.1063/1.1654480
Tu, K.N., Tan, S.I., Crowder, B.L. (1973) Circular etch pits in ion‐implanted amorphous silicon films. Applied Physics Letters, 22 (6). 274-275 doi:10.1063/1.1654636
Ziegler, J. F., Cole, G. W., Baglin, J. E. E. (1972) Technique for determining concentration profiles of boron impurities in substrates. Journal of Applied Physics, 43 (9). 3809-3815 doi:10.1063/1.1661816
Ziegler, J.P., Crowder, B.L. (1973) Erratum: Defining the ``random'' spectrum as used in the channeling technique of nuclear backscattering. Applied Physics Letters, 22 (7). 347 doi:10.1063/1.1654666
Brodsky, M.H., Kaplan, D., Ziegler, J.F. (1972) Densities of amorphous Si films by nuclear backscattering. Applied Physics Letters, 21 (7). 305-307 doi:10.1063/1.1654388
Tan, S. I., Berry, B. S., Crowder, B. L. (1972) Elastic and Anelastic Behavior of Ion‐Implanted Silicon. Applied Physics Letters, 20 (2). 88-90 doi:10.1063/1.1654060
Hirvonen, J. K., Eisen, F. H. (1971) Lattice Disorder in Ion‐Implanted Boron‐Doped Silicon. Applied Physics Letters, 19 (1). 14-16 doi:10.1063/1.1653724
Crowder, B. L., Morehead, F. F. (1969) ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON. Applied Physics Letters, 14 (10). 313-315 doi:10.1063/1.1652664
Akasaka, Youichi, Horie, Kazuo, Kawazu, Satoru (1972) Lateral spread of boron ions implanted in silicon. Applied Physics Letters, 21 (4). 128-129 doi:10.1063/1.1654311
Bauer, L. ‐O. (1972) Enhanced Annealing Effects in Boron‐Implanted Layers in Silicon by Postimplantation of Silicon Ions. Applied Physics Letters, 20 (3). 107-109 doi:10.1063/1.1654067
 
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