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Coldren, L. A., Iga, K., Miller, B. I., Rentschler, J. A. (1980) GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet. Applied Physics Letters, 37 (8). 681-683 doi:10.1063/1.92050

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Reference TypeJournal (article/letter/editorial)
TitleGaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
JournalApplied Physics Letters
AuthorsColdren, L. A.Author
Iga, K.Author
Miller, B. I.Author
Rentschler, J. A.Author
Year1980 (October 15)Volume37
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.92050Search in ResearchGate
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Mindat Ref. ID8467874Long-form Identifiermindat:1:5:8467874:4
GUID0
Full ReferenceColdren, L. A., Iga, K., Miller, B. I., Rentschler, J. A. (1980) GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet. Applied Physics Letters, 37 (8). 681-683 doi:10.1063/1.92050
Plain TextColdren, L. A., Iga, K., Miller, B. I., Rentschler, J. A. (1980) GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet. Applied Physics Letters, 37 (8). 681-683 doi:10.1063/1.92050
In(1980, October) Applied Physics Letters Vol. 37 (8) AIP Publishing

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Coldren, L. A., Miller, B. I., Iga, K., Rentschler, J. A. (1981) Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching. Applied Physics Letters, 38 (5). 315-317 doi:10.1063/1.92353
Miller, B. I., Iga, K. (1980) GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch. Applied Physics Letters, 37 (4). 339-341 doi:10.1063/1.91939
Ebeling, K. J., Coldren, L. A., Miller, B. I., Rentschler, J. A. (1983) Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers. Applied Physics Letters, 42 (1). 6-8 doi:10.1063/1.93729
Coldren, L. A., Koch, T. L., Bridges, T. J., Burkhardt, E. G., Miller, B. I., Rentschler, J. A. (1985) Etched‐groove coupled‐cavity vapor‐phase‐transported window lasers at 1.55 μm. Applied Physics Letters, 46 (1). 5-7 doi:10.1063/1.95852
Coldren, L. A., Bösch, M. A., Rentschler, J. A. (1980) Multistate amorphous‐semiconductor switch. Applied Physics Letters, 36 (8). 688-690 doi:10.1063/1.91593
Ou, S. S., Yang, J. J., Jansen, M. (1990) 5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet. Applied Physics Letters, 57 (18). 1861-1863 doi:10.1063/1.104039
Bösch, M. A., Coldren, L. A., Good, E. (1981) Reactive ion beam etching of InP with Cl2. Applied Physics Letters, 38 (4). 264-266 doi:10.1063/1.92338
Iga, Kenichi, Kambayashi, Toshio, Wakao, Kiyohide, Sakamoto, Yasuo (1979) GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors. Japanese Journal of Applied Physics, 18 (10) 2035-2036 doi:10.1143/jjap.18.2035
Matsui, Teruhito, Sugimoto, Hiroshi, Ohishi, Toshiyuki, Abe, Yuji, Ohtsuka, Ken’ichi, Ogata, Hitoshi (1989) GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen. Applied Physics Letters, 54 (13). 1193-1194 doi:10.1063/1.100749
Bouley, J. C., Chaminant, G., Charil, J., Devoldere, P., Gilleron, M. (1981) A Schottky‐barrier‐delineated stripe structure for a GaInAsP‐InP cw Laser. Applied Physics Letters, 38 (11). 845-847 doi:10.1063/1.92214
Tamari, N., Oron, M., Miller, B. I., Ballman, A. A., Nahory, R. E., Martin, R. J., Shtrikman, H., Coldren, L. A. (1982) High quantum efficiency InGaAsP/InP lasers. Applied Physics Letters, 41 (11). 1025-1027 doi:10.1063/1.93398
 
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