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Coldren, L. A., Miller, B. I., Iga, K., Rentschler, J. A. (1981) Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching. Applied Physics Letters, 38 (5). 315-317 doi:10.1063/1.92353

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Reference TypeJournal (article/letter/editorial)
TitleMonolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching
JournalApplied Physics Letters
AuthorsColdren, L. A.Author
Miller, B. I.Author
Iga, K.Author
Rentschler, J. A.Author
Year1981 (March)Volume38
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.92353Search in ResearchGate
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Mindat Ref. ID8468488Long-form Identifiermindat:1:5:8468488:8
GUID0
Full ReferenceColdren, L. A., Miller, B. I., Iga, K., Rentschler, J. A. (1981) Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching. Applied Physics Letters, 38 (5). 315-317 doi:10.1063/1.92353
Plain TextColdren, L. A., Miller, B. I., Iga, K., Rentschler, J. A. (1981) Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching. Applied Physics Letters, 38 (5). 315-317 doi:10.1063/1.92353
In(1981, March) Applied Physics Letters Vol. 38 (5) AIP Publishing

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Coldren, L. A., Iga, K., Miller, B. I., Rentschler, J. A. (1980) GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet. Applied Physics Letters, 37 (8). 681-683 doi:10.1063/1.92050
Ebeling, K. J., Coldren, L. A., Miller, B. I., Rentschler, J. A. (1983) Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers. Applied Physics Letters, 42 (1). 6-8 doi:10.1063/1.93729
Bösch, M. A., Coldren, L. A., Good, E. (1981) Reactive ion beam etching of InP with Cl2. Applied Physics Letters, 38 (4). 264-266 doi:10.1063/1.92338
Miller, B. I., Iga, K. (1980) GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch. Applied Physics Letters, 37 (4). 339-341 doi:10.1063/1.91939
Coldren, L. A., Koch, T. L., Bridges, T. J., Burkhardt, E. G., Miller, B. I., Rentschler, J. A. (1985) Etched‐groove coupled‐cavity vapor‐phase‐transported window lasers at 1.55 μm. Applied Physics Letters, 46 (1). 5-7 doi:10.1063/1.95852
Coldren, L. A., Ebeling, K. J., Rentschler, J. A., Burrus, C. A., Wilt, D. P. (1984) Continuous operation of monolithic dynamic‐single‐mode coupled‐cavity lasers. Applied Physics Letters, 44 (4). 368-370 doi:10.1063/1.94771
Chen, P. C., Yu, K. L., Margalit, S., Yariv, A. (1981) Embedded epitaxial growth of low‐threshold GaInAsP/InP injection lasers. Applied Physics Letters, 38 (5). 301-303 doi:10.1063/1.92366
Liau, Z. L., Walpole, J. N. (1987) Large monolithic two‐dimensional arrays of GaInAsP/InP surface‐emitting lasers. Applied Physics Letters, 50 (9). 528-530 doi:10.1063/1.98148
Nunoya, Nobuhiro, Nakamura, Madoka, Yasumoto, Hideo, Tamura, Shigeo, Arai, Shigehisa (1999) Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH 4/H 2 Reactive Ion Etching. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l1323
Boyd, G. D., Coldren, L. A., Storz, F. G. (1980) Directional reactive ion etching at oblique angles. Applied Physics Letters, 36 (7). 583-585 doi:10.1063/1.91554
Matsutani, Akihiro, Koyama, Fumio, Iga, Kenichi (1995) Three‐dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion beam etching. Applied Physics Letters, 66 (1). 64-66 doi:10.1063/1.114184
 
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