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Hwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1982) Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry. Applied Physics Letters, 41 (9). 844-846 doi:10.1063/1.93714

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry
JournalApplied Physics Letters
AuthorsHwang, H. L.Author
Hwu, C. C.Author
Liue, J. C.Author
Lin, H. H.Author
Year1982 (November)Volume41
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.93714Search in ResearchGate
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Mindat Ref. ID8471323Long-form Identifiermindat:1:5:8471323:2
GUID0
Full ReferenceHwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1982) Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry. Applied Physics Letters, 41 (9). 844-846 doi:10.1063/1.93714
Plain TextHwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1982) Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry. Applied Physics Letters, 41 (9). 844-846 doi:10.1063/1.93714
In(1982, November) Applied Physics Letters Vol. 41 (9) AIP Publishing

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Hwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1983) Erratum: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry [Appl. Phys. Lett. 41, 844 (1982)]. Applied Physics Letters, 42 (3). 305 doi:10.1063/1.94117
Hong, C. H., Park, C. Y., Kim, H.‐J. (1992) Structure and crystallization of low‐pressure chemical vapor deposited silicon films using Si2H6 gas. Journal of Applied Physics, 71 (11). 5427-5432 doi:10.1063/1.350565
Paine, D. C., Bravman, J. C., Yang, C. Y. (1987) Observations of β‐tungsten deposited by low pressure chemical vapor deposition. Applied Physics Letters, 50 (9). 498-500 doi:10.1063/1.98156
Tai, Y. C., Mastrangelo, C. H., Muller, R. S. (1988) Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films. Journal of Applied Physics, 63 (5). 1442-1447 doi:10.1063/1.339924
Habraken, F. H. P. M., Tijhaar, R. H. G., van der Weg, W. F., Kuiper, A. E. T., Willemsen, M. F. C. (1986) Hydrogen in low‐pressure chemical‐vapor‐deposited silicon (oxy)nitride films. Journal of Applied Physics, 59 (2). 447-453 doi:10.1063/1.336651
Hatty, V., Kahn, H., Trevino, J., Zorman, C. A., Mehregany, M., Ballarini, R., Heuer, A. H. (2006) Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films. Journal of Applied Physics, 99 (1). 13517pp. doi:10.1063/1.2158135
Hakvoort, R. A., Schut, H., van Veen, A., Bik, W. M. Arnold, Habraken, F. H. P. M. (1991) Positron annihilation study of low pressure chemical vapor deposited silicon nitride films. Applied Physics Letters, 59 (14). 1687-1689 doi:10.1063/1.106218
Tai, Y. C, Mastrangelo, C. H., Muller, R. S. (1989) Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]. Journal of Applied Physics, 66 (7). 3420 doi:10.1063/1.344503
Chen, T. P., Lei, T. F., Lin, H. C., Chang, C. Y., Hsieh, W. Y., Chen, L. J. (1994) Low temperature growth of silicon‐boron layer by ultrahigh vacuum chemical vapor deposition. Applied Physics Letters, 64 (14). 1853-1855 doi:10.1063/1.111777
Abelson, J. R., Tsai, C. C., Sigmon, T. W. (1986) Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering. Applied Physics Letters, 49 (14). 850-852 doi:10.1063/1.97514
Lai, P. T., Jingping, Xu, Lo, H. B., Cheng, Y. C. (1997) Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation. Applied Physics Letters, 70 (8). 996-998 doi:10.1063/1.118460
 
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