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Hwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1983) Erratum: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry [Appl. Phys. Lett. 41, 844 (1982)]. Applied Physics Letters, 42 (3). 305 doi:10.1063/1.94117

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry [Appl. Phys. Lett. 41, 844 (1982)]
JournalApplied Physics Letters
AuthorsHwang, H. L.Author
Hwu, C. C.Author
Liue, J. C.Author
Lin, H. H.Author
Year1983 (February)Volume42
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.94117Search in ResearchGate
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Mindat Ref. ID8471736Long-form Identifiermindat:1:5:8471736:2
GUID0
Full ReferenceHwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1983) Erratum: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry [Appl. Phys. Lett. 41, 844 (1982)]. Applied Physics Letters, 42 (3). 305 doi:10.1063/1.94117
Plain TextHwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1983) Erratum: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry [Appl. Phys. Lett. 41, 844 (1982)]. Applied Physics Letters, 42 (3). 305 doi:10.1063/1.94117
In(1983, February) Applied Physics Letters Vol. 42 (3) AIP Publishing

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Hwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1982) Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry. Applied Physics Letters, 41 (9). 844-846 doi:10.1063/1.93714
Tai, Y. C, Mastrangelo, C. H., Muller, R. S. (1989) Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]. Journal of Applied Physics, 66 (7). 3420 doi:10.1063/1.344503
Mikkelsen, J. C. (1982) Erratum: Oxidant transport during steam oxidation of silicon [Appl. Phys. Lett. 39, 903 (1981)]. Applied Physics Letters, 41 (11). 1105 doi:10.1063/1.93719
Jain, A. K., Likharev, K. K., Lukens, J. E., Sauvageau, J. E. (1983) Erratum: Low‐frequency behavior of coupled Josephson junctions near phase locking [Appl. Phys. Lett. 41, 566 (1982)]. Applied Physics Letters, 42 (3). 305 doi:10.1063/1.94112
Jillie, D. W., Kroger, H., Smith, L. N., Cukauskas, E. J., Nisenoff, M. (1982) Erratum: Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers [Appl. Phys. Lett. 40, 747 (1982)]. Applied Physics Letters, 41 (9). 897 doi:10.1063/1.93722
Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
Bai, G. R., Chang, H. L. M., Foster, C. M. (1994) Erratum: ‘‘Preparation of single‐crystal Y3Al5O12 thin film by metalorganic chemical vapor deposition’’ [Appl. Phys. Lett. 64, 1777 (1994)]. Applied Physics Letters, 65 (6). 790 doi:10.1063/1.113088
Chichibu, S., Iwai, A., Matsumoto, S., Higuchi, H. (1992) Erratum: ‘‘Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane’’ [Appl. Phys. Lett. 60, 489 (1992)]. Applied Physics Letters, 60 (19). 2439 doi:10.1063/1.107447
Xing, G. C., Bachmann, K. J., Posthill, J. B. (1990) Erratum: High‐pressure vapor transport of ZnGeP2 [Appl. Phys. Lett. 56, 271 (1990)]. Applied Physics Letters, 56 (18). 1808 doi:10.1063/1.103340
Dieleman, J., Martens, T. H. G. (1982) Erratum: Strong orientation dependence of the formation of surface stacking faults during oxidation of float‐zone silicon [Appl. Phys. Lett. 40, 340 (1982)]. Applied Physics Letters, 41 (2). 208 doi:10.1063/1.93720
Chinnasamy, C. N., Huang, J. Y., Lewis, L. H., Vittoria, C., Harris, V. G. (2010) Erratum: “Direct chemical synthesis of high coercivity SmCo nanoblades” [Appl. Phys. Lett. 93, 032505 (2008)]. Applied Physics Letters, 97 (5). 59901pp. doi:10.1063/1.3456727
 
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